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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2559-2561 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/ GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 358-365 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we investigated the relationship between the integral Schottky barrier height (SBH) obtained from conventional current–voltage (I–V) measurement and the distribution of the local SBH measured by ballistic electron emission microscopy (BEEM) on a nanometer scale length. For this purpose, we investigated inhomogeneous Au/Co/GaAs67P33-Schottky contacts. The samples were prepared by the deposition of a discontinuous Co film on the semiconductor followed by the deposition of a continuous Au film. This provided regions with local presence of one or the other metal (Au or Co) at the metal-semiconductor interface, resulting in mesoscopically extended SBH inhomogeneities. The local SBH distribution as well as the integral SBH depended on the preparation parameter of the Co layer, i.e., on the combination of the substrate temperature (300 or 500 K) and the nominal Co thickness (0, 0.25, 0.5, 0.8, 1.0 nm). For the different preparation parameters, statistical distributions of the local SBH were measured by BEEM. Treating these SBH distributions in terms of a parallel conduction model for the electron transport across the MS interface, we calculated for each preparation parameter an integral SBH and compared it with the measured integral SBH obtained from conventional I–V measurement. The calculated and measured integral SBH's were in very good agreement, demonstrating clearly the strong influence of the low SBH regions on the electron transport across the interface and therefore on the integral SBH. The SBH values for homogeneous Au/GaAs67P33- and Co/GaAs67P33-Schottky contacts, i.e., with only one sort of metal at the interface, were determined to be ΦSBAu=1180±10 meV and ΦSBCo=1030±10 meV. As with regard to the inhomogeneous Schottky contacts the fraction of area of the MS interface covered by Co increased, the local SBH distributions as well as the integral SBH's decreased gradually from the value of ΦSBAu to ΦSBCo. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3114-3116 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we demonstrate the applicability of conducting atomic force microscopy (AFM) for the quantitative electrical characterization of thin (3–40 nm) SiO2 films on a nanometer scale length. Fowler–Nordheim (F–N) tunneling currents on the order of 0.02–1 pA are measured simultaneously with the oxide surface topography by applying a voltage between the AFM tip and the silicon substrate. Current variations in the F–N current images are correlated to local variations of the oxide thickness on the order of several angströms to nanometers. From the microscopic current–voltage characteristics the local oxide thickness can be obtained with an accuracy of ±0.3 nm. Local oxide thinning of up to 3.3 nm was found at the edge between gate oxide and field oxide of a metal-oxide-semiconductor capacitor with a 20-nm-thick gate oxide. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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