Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 121-123 (Mar. 2007), p. 913-916
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
The elastic deformation and piezoelectric field in GaN /AlN/ quantum dots have beeninvestigated. The electronic levels of quantum dots have been given in this paper. The 3D strainfield and piezoelectric potential are calculated based on and the effective mass theory and finiteelement method. The effect of spontaneous and piezoelectric polarization is taken into account inthe calculation. The ground bound state and the several lowest excited states of quantum dots havebeen studied. It is found that the size of quantum dots controls the conduction band edge, electroniclevels and more other optical properties. The calculation results are very helpful in designing highquality infrared photodetector and laser
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.913.pdf
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