ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Under forward bias bipolar 4H- and 6H-SiC devices are known to degrade rapidlythrough stacking fault formation and expansion in the basal plane. It is believed that the ob-served rapid stacking fault growth is due to a recombination-enhanced dislocation glide (REDG)mechanism at the bordering partial dislocations. This degradation phenomenon has generatedconsiderable interest in the involved dislocations — in particular in their atomic and electronicstructure, but also in the mechanisms of their glide motion. Fortunately, nowadays advances incomputing power and in theoretical methodology allow the ab initio based modelling of someaspects of the problem. This paper therefore gives a brief review of recent activities in thisfield, and further discusses some general problems of ab initio based modelling of dislocationsin compound semiconductors
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.321.pdf
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