ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Fabrication of flexible device structures and nanoscale size definition are presently among the mostimportant and ambitious development goals in the IT field. We have recently prepared the verticalnanowire field effect transistor in the flexible polymer foils based on ion tracks. The high-energetic fastheavy ions were used to irradiate the 8μm PET foils and then the chemical etching method wereemployed to prepare cylindrical channels in these PET foils. These channels were subsequently filledwith insulator material and semiconductor, and then provided with suitable metallic contacts, to obtaina vertical field-effect transistor device. Preparation and first electronic results on this new device arereported. Typically over 107 transistors per cm2 with the devices’ diameter of ~100 nm can be obtainedin this technique. The fabrication does not require lithography on the scale of a single transistor, and issuitable for large-area and flexible applications
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.507.pdf
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