ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC epitaxial layers on Carbon-face (C-face) substrates were grown by alow-pressure hot-wall type chemical vapor deposition system. The C-face substrates were preparedby fine mechanical polishing using diamond abrasives with the grit size of 0.25 %m and in-situ HCletching at 1400ºC, which produced surface roughness of 0.27 nm. The use of the smooth substratesmade it possible to decrease the substrate temperature and specular surface morphologies wererealized at C/Si ratios of 1.5 or less both for a substrate temperature of 1550ºC and for that of1500ºC. Surface roughness of 0.26 nm and the residual donor concentration of 6.7×1014 cm-3 wereobtained for a C-face epitaxial layer grown at a C/Si ratio of 1.5 and at a substrate temperature of1550ºC. Schottky barrier diodes were fabricated on a non-doped C-face epitaxial layer grown at1500ºC and it was verified that a high quality metal-semiconductor interface was formed on theepitaxial layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.153.pdf
Permalink