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Isolation, characterization and expression of a novel vegetative insecticidal protein gene of Bacillus thuringiensis (2005)

Bhalla, Ritu ; Dalal, Monika ; Panguluri, Siva K. ; [et al.]

Oxford, UK : Blackwell Publishing Ltd

FEMS microbiology letters 243 (2005), S. 0

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ISSN: 1574-6968

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Biology

Notes: Twenty-four serovars of Bacillus thuringiensis (Bt) were screened by polymerase chain reaction to detect the presence of vegetative insecticidal protein gene (vip)-like sequences by using vip3Aa1-specific primers. vip-like gene sequences were identified in eight serovars. These genes were cloned and sequenced. The deduced amino acid sequence of the vip3Aa14 gene from Bacillus thuringiensis tolworthi showed considerable differences as compared to those of Vips reported so far. The vip3Aa14 gene from Bt tolwarthi was expressed in Escherichia coli using expression vector pET29a. The expressed Vip3Aa14 protein was found in cytosolic supernatant as well as pellet fraction, but the protein was more abundant in the cytosolic supernatant fraction. Both full-length and truncated (devoid of signal sequence) Vips were highly toxic to the larvae of Spodoptera litura and Plutella xylostella. Truncation of Vip3Aa14 protein at N-terminus did not affect its insecticidal activity.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1016/j.femsle.2005.01.011

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Study of avalanche breakdown (MI) mode in sub micron MOSFET device (2005)

Singh, A.K.

Bingley : Emerald

Microelectronics international 22 (2005), S. 16-20

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ISSN: 1356-5362

Source: Emerald Fulltext Archive Database 1994-2005

Topics: Electrical Engineering, Measurement and Control Technology

Notes: Purpose - To study the breakdown (MI) mechanism in the sub-micron MOSFET device. Design/methodology/approach - Second-order Poisson's differential equation is solved for suitable boundary condition to find the electric field expression for the sub-micron devices. With the help of the electric field expression the exact relation for multiplication factor is derived, and then the equation for breakdown voltage has been generated. Findings - This research paper provides the following findings: by controlling oxide thickness, junction depth and drain voltage, the breakdown can be easily controlled in the sub-micron device; multiplication factor is not only affected by maximum field but also due to critical field; for very low gate voltage, the offset voltage mainly governs the breakdown; the breakdown voltage increases continuously as the channel length increases. It means, for larger channel length the breakdown will occur at high drain voltage. Research limitation - This paper is based on the assumption that the electric field along the channel is independent of the junction depth (although not correct) and varying linearly from zero to Esat. Orginality/value - The paper derived the exact expression of the multiplication factor. Also discusses that for MI mode of breakdown, the breakdown voltage increases slowly with the gate voltage and approximated by drain saturation voltage plus offset voltage.