Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 103-104 (Apr. 2005), p. 75-78
ISSN:
1662-9779
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Physik
Notizen:
In this paper, a single wafer linear IPA vapour based vertical drying technique is presented. Using salt residue tests the performance of this technique is evaluated and compared to spin drying. The equivalent film thickness of evaporating liquid is below 0.05µm for blanket wafers, which is two orders of magnitude less than with spin drying. It is also shown that the presence of surface topography (200nm high TEOS features on Si covered with a chemical oxide) does not significantlyinfluence the drying performance. A study of the process window shows that for the setup evaluated in this work best performance is achieved when the IPA/N2 flow rate is above 20 liters per minute and the drying speed is below 8 mm/s. With a manual prototype already very good particle performance is demonstrated
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.103-104.75.pdf
Permalink
Bibliothek |
Standort |
Signatur |
Band/Heft/Jahr |
Verfügbarkeit |