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  • 2005-2009  (1)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 399-404 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The effectiveness of phosphorus diffusion gettering (PDG) and related segregation coefficients for differentmetal impurities were measured applying thermal treatments in the temperature range 800-950 °C for different times.We used multi-crystalline and mono-crystalline CZ p-type wafers with different boron concentrations and differentlevels of dislocations and bulk micro-defects (BMD). In all sample types, for Cu and Ni we found complete gettering inthe temperature range investigated. In the case of Fe, the segregation coefficient increases with both increase intemperature and extension of time. The increase is qualitatively changing when going above 900 °C. At 950 °C thesegregation coefficient increases faster at shorter diffusion time but at extended diffusion time it increases slower ascompared to diffusion at 900 °C. At the same temperature and time of phosphorus diffusion the segregation coefficient isfound to be independent of the metal impurity concentration in the range of 1012-1015 cm-3 investigated. We have shownthat the presence of BMD and dislocations in bulk silicon does not impede the ability of PDG to completely remove Fe,Ni and Cu metal impurities from the bulk. Further analysis suggests that the PDG has the same gettering efficiency formono-crystalline silicon and multi-crystalline silicon. We conclude that if any bulk precipitation of Fe, Ni and Cuimpurities is present in multi-crystalline silicon it cannot seriously compete with PDG. However we found thatincreasing the boron concentration in the samples reduces the segregation coefficient of Fe, and this reduction is moresevere at lower temperatures. Finally, by applying a post anneal ramp down from 900 °C to 700 °C after phosphorusdiffusion, we found that the Fe segregation coefficient increases by a factor of 36 for lightly B doped samples, from 53 to1919, leading to a significant reduction of Fe in the bulk after 2 hours ramp down anneal
    Type of Medium: Electronic Resource
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