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  • Electronic Resource  (3)
  • 2000-2004  (1)
  • 1995-1999  (2)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 537-542 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained InGaAsP/InP single quantum wells grown by low pressure metalorganic vapor phase epitaxy are studied by photoluminescence. We demonstrate that the analysis of the Arrhenius plot, specially modified to fit the temperature dependence of the integrated photoluminescence intensity, can be used as a complementary technique in order to identify different optical transitions that take place in more complex photoluminescence spectra. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3400-3402 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on experiments aimed at producing three-dimensional self-organization in InAs quantum-dot multilayers embedded in GaAs. These InAs/GaAs quantum-dot multilayers have been grown by molecular beam epitaxy. Employing atomic force microscopy, we have analyzed the island density in samples with different number of periods of InAs/GaAs bilayers The results reveals a decrease and a tendency to saturation of the island density with an increase in the number of periods, as a three-dimensional self-organization characteristic of these samples. Optical properties of the samples are examined via photoluminescence spectroscopy. The evolution of the quantum-dot photoluminescence peak position indicates an increment in the mean size of the buried islands and a relative homogenization in size of the quantum dots, as the number of periods increases. The results of the optical measurements agree with the morphological data, and characterize a spatial process of self-organization, related to the increment of the number of periods in the multilayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1500-1502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel form birefringence effect associated with periodic corrugations in semiconductor/oxide interfaces of large-index-step high contrast Bragg mirrors of vertical microcavities is discussed in this communication. A simple model is proposed in which the corrugations have a square-wave profile with alternating refraction index whose period is much smaller than the cavity mode wavelength. This new effect has potential use in polarization controlled emission of vertical cavity surface emitting lasers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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