ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Reliable and efficient beam generation and setup can provide significant cost-of-ownership advantages for modern high current ion implantation in the semiconductor industry. Automated tuning algorithms which make use of fundamental models to aid the decision-making process can be more effective at producing robust tuning solutions over the wide range of operating parameters typically called for in this industry. The ability to predict ion source, extraction, and beamline behavior over a range of energies from 0.2 to 160 keV, beam currents from 0.01 to 25 mA, using six or more ion species, over the full lifetime of the ion source, allows the full flexibility of the implant tool to be realized. Empirical and fundamental models which describe this behavior on a variety of Axcelis high current ion implant platforms are presented, and the ways in which these models may be used to improve overall implanter performance are demonstrated. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1427352
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