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  • 1
    Publication Date: 2022-03-14
    Language: English
    Type: article , doc-type:article
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  • 2
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 3157-3162 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In this paper the temperature/pressure dependence of the refractive index of liquid water is analyzed using the two-state outer-neighbor mixed bonding structural model. So far, this theoretical model has been successful in reproducing, usually within the experimental uncertainty, the temperature/pressure dependence of the density, the viscosity, and the oxygen–oxygen pair correlation functions, in addition to the isothermal compressibility and isotope effects of this important substance. The philosophy of the present paper is to use the high accuracy of refractive index measurements to further test this model. It is shown that a very simple linear dependence with respect to temperature and pressure of the specific refractions LI and LII of the two contributing structural components in this two-state model is sufficient to give better than 5-decimal-point agreement with the experimental refractive index data at low pressures and temperatures between about −10 °C and +70 °C. The maximum in the refractive index between −5 °C and +5 °C is reproduced to an even better precision. Generally better than 4-decimal-point accuracy is achieved for higher pressures, where the experimental data are less accurately known. The pressure dependence considered here also allows the calculation of the isothermal piezo-optic coefficient as a function of temperature, which exhibits a minimum near 50 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 7796-7797 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The valid range of the emphasized experimental data and need, in very precise comparisons, to compensate for the very small temperature shifts resulting from revisions in the accepted standard for the International Temperature Scale over the years, are acknowledged. However, it is emphasized that these corrections do not invalidate the approach and that the physical motivation underlying the mixture model analysis leads to physically meaningful fitting parameters; a result not found in any previous treatment. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1361-1377 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dynamics of the UV photochemistry of HBr on LiF(001) has been studied by angle-resolved time-of-flight mass spectrometry in ultra-high vacuum. Single-photon photodissociation of adsorbed HBr at 193 nm resulted in photofragment translational energy distributions that differed from those produced in the gas-phase photolysis. Angular distributions of the fast H-atom photofragments peaked at 55±5° to the surface normal, consistent with a preferentially oriented adsorbate geometry. The angular distribution of atomic H obtained from photodissociation of HBr(ad) using polarized light indicated that a substantial fraction of the H atoms collided with the surface before leaving it. Two types of photoreactions in the adsorbed state were observed. Molecular hydrogen was formed in the photoinitiated abstraction reaction, H+HBr(ad)→H2(g)+Br, and its markedly non-Boltzmann translational energy distribution was found to have less energy than would be consistent with gas-phase experiments (performed elsewhere). Photoproducts from the bimolecular reaction 2HX(ad)→H2+X2, X=Cl, Br were also observed in the present study. This photoreaction, which did not depend on prior photodissociation of HX(ad), is thought to proceed through electronic excitation of an HX dimer in the adsorbed state.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2232-2235 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modified Hartshorn inductance bridge is used to follow changes in the magnetization of superparamagnetic samples in order to determine their average temperature. The thermometry is performed in the temperature range of 475–525 K. During routine experiments, the rms noise voltage in the bridge is approximately 300 nV when the primary coil is excited by a 200 mA rms current at a frequency of 47 Hz. This corresponds to a signal-to-noise ratio of 3000 and a temperature sensitivity of 0.015 K for typical samples studied.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3291-3293 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a thin predeposited B layer prior to the epitaxial growth of Ge on CaF2, we have obtained significantly improved Ge crystalline quality and surface morphology for Ge/CaF2/Si(111) and Ge/CaF2/Si(100) structures. Although B acts as a surfactant in suppressing island formation, it does not migrate to the growth front during Ge growth, which was widely observed in the surfactant-assisted epitaxial growth of Ge on Si. The B predeposit also prevents Ca from migrating to the Ge surface, and promotes A-type epitaxy of Ge(111) when Si(111) substrates are used.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 338-340 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While epitaxial CaF2 films grown on Si(111) at temperatures above 550 °C exhibited flat capacitance-voltage (C-V) curves, suggesting a pinned CaF2/Si(111) interface, we have observed unpinned C-V curves from as-deposited epitaxial CaF2 grown at 300 °C. Our results demonstrate that C-V characteristics of CaF2/Si(111) are determined by the thermal history, rather than the crystalline quality, of the CaF2 film. Correlations among CaF2/Si interface state density, thermal stress, and atomic bonding at the interface are discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 270-272 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite their large lattice mismatch (∼25%), epitaxial CaF2 films have been grown on single crystal Al(111) on Si(111) by low temperature molecular beam epitaxy. X-ray diffraction shows that the orientations of the CaF2 are the same as those of the Al films, whether the orientations of the Al are the same rotated 180° or with respect to the underlying Si substrate. Furthermore, our successful fabrication of an epitaxial Al/CaF2/Al/Si(111) structure suggests that Al can be a useful conductor material in three-dimensional device integration.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2467-2469 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the visible photoluminescence (PL) and microstructure of amorphous Si (a-Si) after annealing and etching. The a-Si layers were grown on (100)Si substrates and partially crystallized by annealing between 550–1150 °C. Porous Si layers (PSLs) were then produced by etching in HF-HNO3. While no visible PL was observed from unannealed and etched a-Si, visible PL was detected after annealing and etching. The observation of visible PL after etching coincided with the observation of Si microcrystallites in the annealed layer. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs.
    Type of Medium: Electronic Resource
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