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  • 1
    Book
    Book
    Graph based representations in pattern recognition; 12 (1998)
    Wien u.a. :Springer,
    Details
    Title: Graph based representations in pattern recognition; 12
    Contributer: Jolion, Jean-Michel , Kropatsch, Walter G.
    Publisher: Wien u.a. :Springer,
    Year of publication: 1998
    Pages: 145 S.
    Series Statement: Computing 12
    Type of Medium: Book
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    Zuse Institute Berlin get availability status
  • 2
    Electronic Resource
    Electronic Resource
    Picosecond mobilities of neat diamino poly(propylene imine) dendrimer DAB(CN)64 from a Raman study of its CN stretching fundamental (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 9230-9234 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The paper is based on mid-frequency Raman scattering data of neat diamino poly(propylene imine) dendrimer molecule DAB(CN)64; time correlation functions were obtained from a band profile analysis of its fundamental CN mode near 2246 cm−1 at four temperatures between 300 and 123 K; lattice relaxation processes were found to be governed by a stretched exponential modulation function with dispersion parameter α=0.90±0.05 (300 K) and 0.85 (123 K) and corresponding time constant τ0=0.78 and 1.15 ps, respectively. The results suggest that the fast fluctuations of the molecular environment of the CN end groups of the dendrimer system regain equilibrium by independent, parallel pathways with Poisson relaxation times τ that show a broader distribution at lower system temperatures. The results imply that the shape and width of the CN band contour are generated by a vibrational dephasing process in the intermediate modulation regime, under inseparable contributions of intra- and intermolecular oscillator–lattice coupling. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478846
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  • 3
    Electronic Resource
    Electronic Resource
    Competition between intermolecular and intramolecular association in flexible hard chain molecules (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 2585-2592 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A new theory to explain the competition between inter- and intramolecular association in flexible hard chain molecules is presented. The theory has been tested through comparisons with Metropolis Monte Carlo simulation results. For intermolecular association we use Wertheim's theory which has been shown to be accurate for intermolecular association in flexible associating hard chain molecules. For intramolecular association we use a theory we developed for intramolecular association in the absence of intermolecular association. These two theories are combined to develop a theory for the competition between inter- and intramolecular association. The new theory is in good agreement with simulation results and is able to predict some salient features of associating chain molecules. The theory predicts that intermolecular association becomes more important at high densities and that intramolecular association dominates at low density and low temperatures. In addition, theory and simulation show a minimum in the compressibility factor when plotted against the association energy at low density. This minimum is due to the presence of intramolecular association and is not observed for intermolecularly associating fluids. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468689
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Online Monitoring of Aromatic Hydrocarbons Using a Near-Ultraviolet Fiber-Optic Absorption Sensor (1995)
    s.l. : American Chemical Society
    Environmental science & technology 29 (1995), S. 1576-1580 
    Details
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/es00006a020
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1126-1128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented showing that a single-layer InAs quantum dot (QD) laser in the AlGaAs–GaAs–InGaAs–InAs heterostructure system is improved in gain and continuous wave (cw) room temperature operation by coupling, via tunneling, auxiliary strained-layer InGaAs quantum wells (QWs) to the single InAs QD layer to assist carrier collection and thermalization. A QW-assisted single-layer InAs QD laser, a QD+QW laser, is demonstrated that operates cw (300 K), and at diode length 150 μm in pulsed operation exhibits gain as high as ∼100 cm−1. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1451989
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  • 6
    Electronic Resource
    Electronic Resource
    Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4500-4502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs–GaAs–InGaAs–InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2×1010/cm2 for a 50 Å GaAs coupling barrier (QW to QD) to 3×1010/cm2 for a 5 Å barrier. The improved QD density and uniformity, as well as improved carrier collection, make possible room-temperature continuous-wave (cw) QD+QW laser operation (a single InAs QD layer) at reasonable diode length (∼1 mm), current density 586 A/cm2, and wavelength 1057 nm. The cw 300 K coupled InAs QD and InGaAs QW AlGaAs–GaAs–InGaA–InAs heterostructure lasers are grown by metalorganic chemical vapor deposition. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430025
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1956-1958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating continuous 300 K photopumped InP quantum dot (QD) laser operation (656–679 nm) realized by modifying and coupling, via tunneling, an auxiliary InGaP quantum well (QW) to the QDs of an InP–In(AlGa)P–InAlP heterostructure grown by metalorganic chemical vapor deposition. The In0.49Ga0.51P QW coupled to the InP QDs by a thin ((approximately-less-than)20 Å) In0.5Al0.3Ga0.2P barrier overcomes the limitations of carrier collection, lateral transport, and thermalization in the QDs, thus yielding a different form of QD laser. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405153
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  • 8
    Electronic Resource
    Electronic Resource
    Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3215-3217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented showing that a p–n InP–In0.5Ga0.5P–In0.5(Al0.3Ga0.2)P–In0.5Al0.5P quantum-dot (QD) heterostructure diode, with an auxiliary ∼20 Å InGaP quantum well (QW) coupled via an In(AlGa)P barrier (∼20 Å) to the single layer of QDs to aid carrier collection, has a steeper current–voltage characteristic than the case of a similar diode with no auxiliary QW. The p–n InP+InGaP QD+QW diode is capable of 300 K visible-spectrum QD laser operation, while the single-layer InP QD diode (single QD layer) saturates at low current ((approximately-less-than)1 mA) and does not exhibit stimulated emission. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416158
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  • 9
    Electronic Resource
    Electronic Resource
    Coupled-stripe quantum-well-assisted AlGaAs–GaAs–InGaAs–InAs quantum-dot laser (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3045-3047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the coupled-stripe laser operation (continuous wave, 300 K) of a single InAs quantum-dot (QD) layer coupled via a thin (5 Å) GaAs barrier to an auxiliary strained InGaAs quantum well (QW) grown (confined) in an AlGaAs–GaAs heterostructure. Because of strain-induced (QW strain) improvement of the QD growth and QD alignment along diagonal (reflecting) ridges, the InGaAs-QW+InAs-QD crystals exhibit high gain along and across laser stripes, which is advantageous for coupled-stripe laser operation. A twin-stripe single-QD-layer QW+QD laser (4 μm stripes on 6 μm centers) of usual cleaved length, 〈 500 μm, is capable of continuous 300 K operation, with only probe heat-sink clamping and testing, at 〉50 mW. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1473686
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  • 10
    Electronic Resource
    Electronic Resource
    An ALS mouse model with a permeable blood–brain barrier benefits from systemic cyclosporine A treatment (2004)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 88 (2004), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: To test potentially beneficial drugs to amyotrophic lateral sclerosis (ALS), we created an ALS mouse model with a permeable blood–brain barrier, by crossing the G93A-SOD1 transgenic mouse with a multiple drug resistance type 1a/b (mdr1a/b) gene knockout mouse. To validate the model, we administered cyclosporine A intraperitoneally to the mice. Cyclosporine A accumulated in the brain and spinal cord of this mouse model, whereas it was unable to penetrate the CNS of mdr1a/b wild-type animals. Systemic administration of cyclosporine A extended the life of the double-mutant male mice by approximately 12%. Surprisingly, the effect was more robust in male mice and only marginal in female mice. These results demonstrate the usefulness of this combined mouse model for the testing of potentially therapeutic drugs and support the role of mitochondrial-mediated apoptosis in the pathway to motor neuron death in SOD1-associated ALS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.2003.02181.x
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