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  • 1
    Electronic Resource
    Electronic Resource
    Global breakdown in an alternating current plasma display panel (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4231-4239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the alternating current plasma display panel, a widespread discharge can take place accidentally in a large number of cells in the upper or lower panel ends. The undesirable discharge is referred to as global breakdown. This is a serious problem, with consequences not only for display quality, but also for product reliability. The mechanism of the global breakdown was examined experimentally using a surface electrometer and theoretically using plasma simulation. From these examinations, the global breakdown mechanism was clarified as follows. Global breakdown was accompanied by charge separation in the horizontal direction of the panel. This charge separation was caused by electron transport downward in the panel during the address discharge. The electron transport formed a negative wall charge on the phosphor surface. When the wall voltage exceeded the insulation voltage of the protective layer, global breakdown occurred. Furthermore, it was clarified that increasing the front dielectric thickness or reducing the back dielectric thickness could suppress the electron transport during the address discharge. These optimizations of cell geometry could eliminate the global breakdown. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351058
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  • 2
    Electronic Resource
    Electronic Resource
    Two-dimensional particle simulation of a sustained discharge in an alternating current plasma display panel (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6216-6223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A plasma discharge due to a sustaining pulse of an alternating current plasma display panel was analyzed using a two-dimensional particle-in-cell code, and basic characteristics of the plasma discharge were calculated. The characteristics of the plasma discharge due to a sustaining pulse are as follows. (i) A large amount of space charge remained after drawing the discharge current. This excess space charge did not contribute to wall charge formation or ultraviolet radiation. (ii) The electron energy distribution function was evaluated and could be well fitted by the Druyvesteyn distribution in the high-energy region. The Druyvesteyn distribution was a consequence of the cross section for electron-Ne elastic scattering. (iii) The calculated ultraviolet radiation efficiency η of the plasma discharge due to a sustaining pulse was between 5.51% and 30.7%. Examination of the sensitivity of the efficiency to the electron temperature showed that reducing the electron temperature was a key to improving the efficiency. (iv) A detailed understanding of the conditions for a stable plasma discharge, memory margin, firing voltage, and electrode voltage of the sustaining pulse were obtained from the voltage transfer curve. The voltage transfer curve could be used to optimize the discharge cell design. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319975
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Fe-exchange-field penetration on the residual amorphous phase in nanocrystalline Fe92Zr8 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7097-7099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of hyperfine interactions has been studied by means of Mössbauer spectroscopy for rapidly quenched amorphous Fe92Zr8 in as-quenched and partially crystallized states. An analysis of the temperature dependence of the mean hyperfine field based on the molecular-field approximation showed that the Curie temperature of the residual intergranular amorphous phase (TCam) is 330±5 K, well above the maximum Curie temperature in amorphous Fe–Zr binary alloys (TC*(approximate)280 K). The difference of TCam−TC* (ΔTCam(approximate)50 K) cannot be attributed to the possible magnetovolume effect in the sample. The difference of ΔTCam could be explained by an enhancement of the molecular field by ∼50 T at 0 K, induced by the Fe exchange field penetrating from the bcc-Fe nanocrystallites. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372942
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  • 4
    Electronic Resource
    Electronic Resource
    Origins of charged particles in vapor generated by electron-beam evaporation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4548-4555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origins of electrons and ions in uranium vapor generated by electron-beam evaporation have been determined. Measurements were made for the electron emission current due to high-energy electron-beam irradiation on a uranium surface (backscattered electrons, etc.), thermionic emission current from the melt surface, and electron current due to vapor ionization. Comparison of these currents confirmed that vapor ionization was the main electron generation process at evaporation surface temperatures above 2200 K. The ionized vapor formed a weakly ionized plasma of very low electron temperature: The degree of ionization ≤1%, electron temperature ≤0.3 eV. The electron-impact ionization process contributed mainly to plasma formation. Beam electrons, their backscattered electrons, and secondary electrons from the beam-irradiated uranium surface were the source electrons for this process. Thermal ionization was the next major process. In addition to the plasma formation model, plasma behavior in vapor was described by a one-dimensional symmetric expansion model. The calculated degree of ionization was in good agreement with the measured value over a wide range of evaporation temperatures and electron-beam currents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352334
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  • 5
    Electronic Resource
    Electronic Resource
    van der Waals epitaxial growth of thin BiI3 films on PbI2 and CdI2 substrates by a hot wall method (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2735-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hot wall technique was applied to grow very thin BiI3 single crystals about 100–1000 A(ring) thick by the achievement of low-temperature growth. The so-called van der Waals epitaxy became possible by employing layered materials such as PbI2 and CdI2 as substrate. BiI3 thin films grown with optimized conditions exhibited a sharp band-edge direct exciton absorption line of 30-meV half-width, which is much sharper than that of a single crystal grown by a conventional method reported so far. The transmission electron diffraction measurements were carried out on the films. It was revealed that highly perfect single crystals with a 4-mm diameter size were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346449
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  • 6
    Electronic Resource
    Electronic Resource
    Sequential deposition growth of Bi-Sr-Ca-Cu-O systems observed using in situ reflection high-energy electron diffraction (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 654-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal growth mechanism in Bi-Sr-Ca-Cu-O thin films has been revealed by sequential deposition with an electron cyclotron resonance (ECR) oxygen plasma using in situ reflection high-energy electron diffraction (RHEED) observation. A series of RHEED patterns presents clear evidence that the unit cell of the Bi-Sr-Ca-Cu-O structure is completed as the Bi layers have sandwiched Sr, Ca, and Cu layers. This crystalline process is not an atomic layer by atomic layer growth but a "unit cell by unit cell'' growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104559
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  • 7
    Electronic Resource
    Electronic Resource
    Superconductivity and crystallinity of Ba2Y1Cu3O7−δ thin films prepared by pulsed laser deposition with substrate bias voltage (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6331-6335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrate bias voltages were found to be significantly effective in preparing high-quality laser-deposited superconducting Ba2Y1Cu3O7−δ films at reduced substrate temperatures. The zero-resistance temperature of the biased films, positive bias being more effective than negative, decreased very slightly when the substrate temperature was lowered, whereas that of the unbiased films decreased considerably. In addition, the surface morphology and c-axis orientation have been improved by applying substrate bias voltages. Bias voltages within ±500 V hardly affect the composition of the resulting films so that stoichiometric films have been obtained from a stoichiometric target. A time-resolved optical observation revealed that a short time emission, probably being oxygen plasma, occurred in a few μs after the laser pulse impingement. The improvement in crystallinity of the resulting films is attributed to this emission. The velocity of emissive species in the plume was determined to be 6×105 cm/s. Under positive-biased conditions slower components with a velocity of 3×105 cm/s or less were also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346877
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  • 8
    Electronic Resource
    Electronic Resource
    Orientational correlation in liquid phosphorous tribromide studied by pulsed neutron total scattering (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5486-5490 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Structure factor Sm(Q) of liquid phosphorous tribromide (PBr3) has been measured at room temperature by means of pulsed neutron total scattering technique. Characteristic features of the experimental Sm(Q) are analyzed in terms of preferred orientations introduced between the nearest neighbors as well as a packing of effectively uncorrelated molecules. The preferred orientation estimated in this analysis is such that a top (or a P atom) of pyramidal shape of each PBr3 molecule points in nearly the same direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458527
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  • 9
    Electronic Resource
    Electronic Resource
    An extreme ultraviolet radiation source for the simulation of the ionosphere (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1721-1726 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An extreme ultraviolet (EUV) radiation source for space simulation of plasma and other related phenomena in the laboratory has been developed. A total of forty-eight small EUV lamps are put together to give a radiation diameter of more than 30 cm. The intensity of this lamp at the hydrogen Lyman-alpha line is more than twenty five times stronger than sunlight at the same wavelength and at a distance of about 30 cm from the source. The source is capable of emitting EUV radiations from 110 nm to the longer wavelengths, either continuously or in pulses, and has been used to produce a plasma of 105 els/cm3 when the pressure of NO gas in the chamber was 10−4 Torr. Since this plasma is extremely calm and fairly Maxwellian, it can be used to study the electron collection mechanism of a probe in a collision dominant medium. The source was also utilized to study the interaction between vibrationally excited nitrogen molecules and thermal electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142412
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 563-565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond thin films have been grown epitaxially on high-pressure synthesized cubic boron nitride (c-BN) particles by using dc plasma chemical vapor deposition. At the early growth stage of the film on c-BN{111} surfaces, the island structure is observed and the number density of islands is about 1011 cm−2. The growth and the coalescence of islands are also found by scanning electron microscopy observation. The continuous film is obtained at the thickness of about 2000 A(ring) and the surface of the film is rather smooth. The Raman peak of the epitaxial diamond film shows the shift toward the lower wave number due to the tensile stress involved in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103647
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