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  • 2000-2004  (10)
  • 1980-1984  (1)
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  • 1
    Digitale Medien
    Digitale Medien
    High-temperature goniometer for thin film growth and ion scattering studies (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1755-1759 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: We have developed a laser-heated six-axis goniometer for oxide thin film growth and ion scattering studies. The goniometer requires only a single CF152 flange for mounting in a vacuum chamber and includes three positioning and three rotational degrees of freedom. All translation and rotation axes are decoupled. A sample with a maximum size of 10 mm×10 mm can be heated to 1200 °C in a pure oxygen environment. The heating source is a 300 W continuous wave Nd:YAG laser. Light from the laser is brought to the sample stage with a combination of flexible and rigid optical fibers. The goniometer includes a motorized manipulator for two ablation targets, making it possible to grow thin films by pulsed laser ablation. Film growth and surface structure can be monitored by reflection high-energy electron diffraction and coaxial impact collision ion scattering spectroscopy. Samples can also be transferred from the goniometer to a room-temperature scanning tunneling microscope inside the vacuum chamber. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1347380
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  • 2
    Digitale Medien
    Digitale Medien
    High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3824-3826 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Combinatorial laser molecular-beam epitaxy method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal (TM) ions in a high throughput fashion. The solubility behavior of TM ions was discussed from the viewpoints of the ionic radius and valence state. The magneto-optical responses coincident with absorption spectra were observed for Mn- and Co-doped samples. Cathodoluminescence spectra were studied for Cr-, Mn-, Fe-, and Co-doped samples, among which Cr-doped ZnO showed two sharp peaks at 2.97 eV and 3.71 eV, respectively, at the expense of the exciton emission peak of pure ZnO at 3.25 eV. Different magnetoresistance behavior was observed for the samples codoped with n-type carriers. Ferromagnetism was not observed for Cr- to Cu-doped samples down to 3 K. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1377856
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  • 3
    Digitale Medien
    Digitale Medien
    Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3426-3428 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose a method of rapid construction of a structural–magnetic–electronic phase diagram of doped Mott insulators. The composition-spread method is utilized for fabricating a film whose doping concentration varies from 0 to 1 continuously. The concurrent x-ray diffractometer that measures x-ray diffraction spectra of all the composition simultaneously, the scanning superconducting quantum interference device microscope, and the infrared optical spectroscopy are employed for characterizing the film. A demonstration is given for a colossal magnetoresistive material, La1−xSrxMnO3. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1326847
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  • 4
    Digitale Medien
    Digitale Medien
    Magnetic properties of Mn-doped ZnO (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 958-960 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the magnetic properties of an oxide-diluted magnetic semiconductor (DMS), Zn0.64Mn0.36O. The temperature dependence of the magnetization shows a spin-glass behavior with the large magnitude of the Curie–Weiss temperature, corresponding to a stronger antiferromagnetic exchange coupling than other II–VI DMSs. The small effective Mn moment (x¯∼0.02) under high field also represents a strong antiferromagnetic exchange coupling in this compound. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1348323
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  • 5
    Digitale Medien
    Digitale Medien
    Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2204-2206 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the observation of stimulated emission in ZnO/MgxZn1−xO superlattices well above room temperature. Two kinds of superlattices grown by laser molecular-beam epitaxy showed clear systematics on the quantum subband levels in absorption and spontaneous emission spectra. Stimulated emission with excitonic origin could be observed at very low optical pumping levels. The threshold excitation intensity changed from 11 to 40 kW/cm2, and the emission energy could be tuned between 3.2 and 3.4 eV, depending on the well thickness and/or the Mg content in the barrier layers. The excitonic stimulated emission could be observed up to 373 K and the characteristic temperature was as high as 87 K. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1315340
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  • 6
    Digitale Medien
    Digitale Medien
    Growth mode mapping of SrTiO3 epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2439-2441 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have mapped the growth mode of homoepitaxial SrTiO3 thin films as a function of deposition rate and substrate temperature during pulsed laser deposition. The transition from layer by layer growth to step flow growth was mapped by making 260 depositions, 3 monolayers each, on a single substrate. The growth mode was determined by time-resolved reflection high-energy electron diffraction. An atomically smooth surface was regenerated after each deposition by annealing the sample at temperatures above 1200 °C. The depositions were performed at an oxygen pressure of 10−6 Torr and covered a temperature range from 900 to 1380 °C. The effective activation energies of surface migration on Ti- and Sr-terminated surfaces were determined from the mapping results. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126369
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  • 7
    Digitale Medien
    Digitale Medien
    Epitaxial growth and valence control of strained perovskite SrFeO3 films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 622-624 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated single-crystalline thin films of perovskite-type iron oxide SrFeO3 which include high valent iron (Fe4+). The fabrication is accomplished on the lattice-mismatched substrates of SrTiO3 [(STO), 1.4% tensile strain] and (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 [(LSAT), 0.5% tensile strain] by pulsed-laser deposition of SrFeO2.5 with Fe3+ state and subsequent annealing in ozone. The SrFeO2.5 films are grown in a layer-by-layer mode, exhibiting atomically smooth surfaces. The ozone annealed films on LSAT show metallic conductivity as observed in bulk SrFeO3, whereas those on STO remain semiconducting due to large tensile strain. A pseudomorphically strained epitaxial structure can be maintained by the proper choice of substrates and growth conditions through the huge volume change accompanied by the valence change from Fe3+ to Fe4+. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1445805
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  • 8
    Digitale Medien
    Digitale Medien
    Effects of dissociative intermediate states on the vibronic dephasing in visible/ultraviolet multiphoton transitions of gaseous molecules (1983)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 2277-2279 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j100236a006
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  • 9
    Digitale Medien
    Digitale Medien
    Stereochemical aspects of micellar properties of esterified glucoside surfactants in water: apparent molar volume, adiabatic compressibility, and aggregation number (2000)
    Springer
    Colloid & polymer science 278 (2000), S. 576-580 
    Details
    ISSN: 1435-1536
    Schlagwort(e): Key words Sugar surfactant ; Anomerism ; Micelle ; Compressibility ; Static light scattering
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau
    Notizen: Abstract  The apparent molar volume and the apparent molar adiabatic compressibility of the sugar-based surfactants methyl 6-O-octanoyl-α-d-glucopyranoside (α-MOnG), methyl 6-O-octanoyl-β-d-glucopyranoside (β-MOnG), and octyl β-d-glucoside were measured over a wide concentration range. Also, the aggregation number of their micelles was determined from the Debye plot using static light scattering data. It was found that the micellar aggregation number for α-MOnG is 179 at 35 °C, which is 1.5 times larger than that for β-MOnG, suggesting that the anomerism of the head group influences the packing of the monomers during micelle formation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003960050558
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  • 10
    Digitale Medien
    Digitale Medien
    Dielectric Properties of Homoepitaxial SrTiO3SrTiO3SrTiO3 Thin Films Grown in the Step-Flow Mode (2000)
    Springer
    Journal of electroceramics 4 (2000), S. 365-368 
    Details
    ISSN: 1573-8663
    Schlagwort(e): SrTiO3 ; step-flow ; dielectric constant
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Maschinenbau
    Notizen: Abstract We have deposited SrTiO3 thin films on Nb-doped SrTiO3 substrates by pulsed laser deposition at temperatures of up to 1400°C. Reflection high energy electron diffraction was used to monitor the film growth mode at various temperatures and it was shown that growth proceeded in the step-flow mode at above 900°C. Capacitors were formed by evaporating platinum pads on the film surface and gold pads on the substrate. Films grown in the step-flow mode showed consistently higher dielectric constants below 200 K than films grown in the layer-by-layer mode. Films with the highest dielectric constant (ε) were obtained using a stoichiometric ablation target at an oxygen pressure of 10SrTiO3 −6SrTiO3 Torr.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1023/A:1009931130005
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