ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ti-deficient SrTixO3−δ films, x〈1, were grown on 〈100〉 oriented SrTiO3 single crystal substrates by radio frequency magnetron sputtering from stoichiometric targets. The Ti-deficiency was adjusted by the sputtering gas pressure. The Ti/Sr cation ratio, x, was determined by Rutherford backscattering and energy dispersive x-ray analysis in a scanning electron microscope. To obtain information on the Ti/O ratio, x-ray absorption spectroscopy was carried out as well. We investigated SrTixO3−δ films with x=0.98, 0.95, and 0.89. The epitaxial growth and lattice imperfections were characterized by x-ray diffraction, electron diffraction, and high resolution transmission electron microscopy. The films crystallized in a tetragonal structure with a maximum mosaic spread of about 0.1°. The c axis was oriented perpendicular to the substrate surface where the c-lattice parameter was increasing with decreasing x. For x〉0.89, the Ti deficiency was primarily compensated by a change of the site occupation on the cation sublattices in combination with oxygen vacancies, i.e., the formation of SrTi and VO point defects, whereas for x〈0.95 the intergrowth of homologs series of the Ruddlesden–Popper phases, Srn+1TinO3n+1, was observed. The dielectric properties of the films are briefly discussed in terms of (SrTiVO) defect complexes. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1305827
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