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  • 2000-2004  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Midinfrared surface-emitting PbSe/PbEuTe quantum-dot lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1225-1227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Midinfrared laser emission from self-organized PbSe quantum dots in a high-finesse vertical-cavity surface-emitting laser structure is reported. The structure was grown by molecular-beam epitaxy and consists of high reflectivity epitaxial EuTe/PbEuTe Bragg mirrors with a PbSe/Pb1−xEuxTe quantum-dot superlattice as the active region. Narrow laser emission at 4.2–3.9 μm induced by optical pumping is achieved at temperatures up to 90 K. The observation of simultaneous two-mode emission indicates a width of the inhomogeneously broadened PbSe dot gain spectrum of about 18 meV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389517
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3953-3955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A comparison with results obtained from transmission electron microscopy demonstrates the feasibility of the x-ray diffraction method for the investigation of sample series, and an improved statistical accuracy of the obtained parameters: with x-ray diffraction, the statistical average of typically 106–107 island columns is obtained, compared to only few in the case of transmission electron microscopy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333683
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Strain and composition distribution in uncapped SiGe islands from x-ray diffraction (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1474-1476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the strain and composition distribution in uncapped SiGe islands grown on Si (001) by x-ray diffraction. In order to be sensitive to the dot layer on the sample surface, and at the same time being able to measure in-plane strain and strain in growth direction, we utilized a scattering geometry at grazing incidence angles, but with high exit angles. The measured intensity distribution is compared to simulations based on the strain distribution calculated by a finite element method. Although pure Ge has been deposited during island growth by molecular beam epitaxy, the Ge composition varies from 0.5 at the island base to 1.0 at the top of the islands. Even at this top, the elastic relaxation reaches only about 50%. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392975
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  • 4
    Electronic Resource
    Electronic Resource
    Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2093-2095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In infrared transmission and photocurrent spectra of self-assembled SiGe quantum dot samples grown in the Stranski–Krastanow mode at temperatures around T=520 °C different types of transitions are observed: in the transmission experiments, an absorption line due to bound-to-bound transitions is measured whereas the photocurrent spectra are determined by bound-to-continuum transitions. The experimental determination of the energies of both types of transitions for the same sample allows a detailed discussion of the features observed in the spectra as well as an estimate of the average Ge content in the dots. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458531
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    Paper (German National Licenses)
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