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  • 2000-2004  (7)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Bingley : Emerald
    Journal of management in medicine 16 (2002), S. 150-158 
    ISSN: 0268-9235
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Medicine
    Notes: The orthopaedic trauma session is almost universally adopted as a means of coping with non-elective orthopaedic demand. Here patients who can be stabilised are treated in a weekday planned theatre session. It allows for greater consultant involvement and a reduction in out-of-hours operating. The utilisation of trauma theatre time is typically low. However, there is an opportunity to make better use of this time by including some "deferrable elective patients" in the session. These are elective patients who have been offered earlier treatment in return for accepting the possibility of postponement, if the trauma demand on the day of the appointment is high. Simulation of patient demand was used to explore the balance between maximising the utilisation of the theatre sessions, avoiding too many overruns and ensuring a reasonable quality of care in a typical hospital in the UK.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Conservation of gene order in vertebrates is evident after hundreds of millions of years of divergence, but comparisons of the Arabidopsis thaliana sequence to partial gene orders of other angiosperms (flowering plants) sharing common ancestry ∼170–235 million years ago yield ...
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2632-2633 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report 105 °C continuous-wave, electrically pumped operation of a 1526 nm vertical-cavity surface-emitting laser. An InP/InGaAsP active region was wafer bonded to GaAs/AlGaAs mirrors, with a superlattice barrier to reduce the number of nonradiative recombination centers in the bonded active region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3561-3563 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, a passive microring-resonator-coupled semiconductor laser structure is proposed. The weakly coupled high-Q microring resonator provides a strong mode-selection filter and could considerably extend the effective cavity length of a conventional Fabry–Perot laser. The side-mode suppression ratio, the linewidth and the frequency chirp of this laser are dramatically improved comparing to distributed feedback and distributed Bragg reflector lasers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1760-1762 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for achieving large-scale monolithic integration of lattice-mismatched materials in the vertical direction and the lateral integration of dissimilar lattice-matched structures has been developed. The technique uses a single nonplanar direct-wafer-bond step to transform vertically integrated epitaxial structures into lateral epitaxial variation across the surface of a wafer. Nonplanar wafer bonding is demonstrated by integrating four different unstrained multi-quantum-well active regions lattice matched to InP on a GaAs wafer surface. Microscopy is used to verify the quality of the bonded interface, and photoluminescence is used to verify that the bonding process does not degrade the optical quality of the laterally integrated wells. The authors propose this technique as a means to achieve greater levels of wafer-scale integration in optical, electrical, and micromechanical devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1580-1582 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3ω method. SiGeC/Si superlattice microcoolers with dimensions as small as 40×40 μm2 were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 °C and 100 °C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 282-284 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A four-channel wavelength multiplexer/demultiplexer for sparse wavelength division multiplexing was demonstrated using cascaded three-dimensional (3D) vertical couplers. 17 nm channel spacing with crosstalk less than 15 dB was achieved. Strong coupled vertical couplers were fabricated using wafer bonding to invert a conventionally processed epitaxial layer and bond to a new host substrate. This technology makes the fabrication of 3D photonic integrated circuits and the realization of multilevel optical interconnects possible. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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