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  • 2000-2004  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Surface oxidation as a diffusion barrier for Al deposited on ferromagnetic metals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5209-5214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grazing incidence x-ray reflectometry has been used to study surface oxidation as a diffusion barrier for Al deposited on ferromagnetic metals (Co, Fe, Ni, and Ni80Fe20). Samples of the form SiO2(backward-slash)10 nm X(backward-slash)4 nm Al with X=(Co, Fe, Ni, and Ni80Fe20) were investigated for X(backward-slash)Al intermixing. Surface oxidation was achieved by exposing the ferromagnetic layer to O2 to oxidize the top two or three atomic layers before depositing the Al layer. Specular x-ray scans were used for the analysis. Samples of the form SiO2(backward-slash)10 nm X(backward-slash)4 nm Au were used to separate topographical roughness from intermixing. Surface oxidation was found to suppress the diffusion of Al into Co, Ni, and Ni80Fe20 but not into Fe. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359151
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  • 2
    Electronic Resource
    Electronic Resource
    Interfacial roughness effects on interlayer coupling in spin valves grown on different seed layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3023-3026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the behavior of interlayer coupling in giant magnetoresistance spin valves as a function of seed layer composition and spacer layer thickness. Using in situ scanning tunneling microscopy, we have measured directly the roughness of the top surface of the lower ferromagnetic layer. We find that the seed layer composition is correlated to the roughnesses of the interfaces inside the spin valve. Interlayer coupling increases with decreasing Cu spacer layer thickness and with increasing interfacial roughness. Results favorably compare to a topographically derived magnetostatic interaction as described by a modified version of Néel's "orange peel" model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372390
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal stability of Ta-pinned spin valves (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6825-6827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been found that large uniaxial anisotropy fields in excess of 120 kA/m (1500 Oe) can be created in thin (3–5 nm) films of Co by obliquely sputtered Ta underlayers. This anisotropy can be used to pin the bottom film of a spin valve while having only a modest effect on the top "free" film, separated by a 2.5 nm Cu spacer layer. This article describes measurements of thermal stability in these Ta-pinned spin valves. Using room temperature giant magnetoresistance (GMR) as a measure, we find that the structure is stable under cumulative 20 min anneals at 25 °C intervals up to 300 °C; GMR decreases to zero upon further anneals up to 450 °C. Measurements taken at elevated temperatures reveal that GMR decreases linearly with temperature, extrapolating to zero at approximately 425 °C, while the anisotropy field is much less temperature dependent, remaining nearly constant up to 150 °C and gradually decreasing to 50% of its room temperature value at 325 °C. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357147
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  • 4
    Electronic Resource
    Electronic Resource
    Exchange bias relaxation in CoO-biased films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6406-6408 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Because the memory of the bias direction is carried by the antiferromagnetic order in exchange biased films, the stability of the antiferromagnetic order is critical to the existence of the exchange bias field. Ferromagnetic resonance was used to measure the relaxation behavior of polycrystalline CoO films coupled to films of Ni80Fe20, probing the system on the time scale of the experiment, (approximate)103 s, and the time scale of the magnetic precession, (approximate)10−10 s. Unidirectional anisotropy (exchange biasing) and isotropic resonance field shifts are observed at the lowest temperatures. Above the apparent exchange bias blocking temperature, isotropic resonance field shifts persist. At still higher temperatures, diminishing resonance field shifts are accompanied by peaks in the FMR linewidth. The results highlight the effects of varying relaxation rates in the CoO relative to the two experimental time scales. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373424
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