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  • 2000-2004  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1660-1665 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A third generation plasma immersion ion implanter dedicated to biomedical materials and research has been designed and constructed. The distinct improvement over first and second generation multipurpose plasma immersion ion implantation equipment is that hybrid and combination techniques utilizing metal and gas plasmas, sputter deposition, and ion beam enhanced deposition can be effectively conducted in the same machine. The machine consists of four sets of high-efficiency metal arc plasma sources with magnetic filters, a custom designed high voltage modulator for operation up to 60 kV, a separate high-frequency, low-voltage power supply for hybrid treatment processes, special rotating sample stage for samples with an irregular shape, and other advanced features. The machine has been installed at Southwest Jiaotong University and operated reliably for 6 months. This article describes the design principles and performances of the machine as well as pertinent biomedical applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 422-424 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here experimental evidence of electron oscillation within the toroidal-section magnetic duct of a filtered vacuum arc plasma source. Our results clearly demonstrate that electrons can oscillate inside the duct under the combined effects of the electric and magnetic fields. In another experiment, we observe that, under the influence of the electron motion, the trajectories of the plasma ions are more or less unchanged except in the intensity when the Bilek plate is biased. Finally, our time-of-flight experiments show that the effects due to collisional scattering between plasma ions and oscillating electrons are masked by those associated with the metal plasma flow through the duct, and collisional scattering does not give rise to an increase of the mean charge state of the plasma ions. We conclude that the application of a bias voltage to the duct not only perturbs the ions but also influences the plasma electrons. Our results demonstrate that electrons at the central axis are one of the major reasons leading to improved plasma transport through the duct. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 19 (2000), S. 1883-1885 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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