Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2068-2070
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Transport measurements were carried out on 15–35 nm diameter silicon nanowires grown using SiH4 chemical vapor deposition via Au or Zn particle-nucleated vapor-liquid-solid growth at 440 °C. Both Al and Ti/Au contacts to the wires were investigated. The wires, as produced, were essentially intrinsic, although Au nucleated wires exhibited a slightly higher conductance. Thermal treatment of the fabricated devices resulted in better electrical contacts, as well as diffusion of dopant atoms into the nanowires, and increased the nanowire conductance by as much as 104. Three terminal devices indicate that the doping of the wires is p type. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126257
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