Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 5808-5811
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The nanostructure of hydrogenated amorphous silicon–germanium alloys, a-Si1−xGex:H, prepared by the hotwire deposition technique (x=0.06–0.79) and by the plasma enhanced chemical vapor deposition technique (x=0 and 0.50) was analyzed by anomalous small-angle x-ray scattering experiments. For all alloys with x〉0 the Ge component was found to be inhomogeneously distributed with correlation lengths of about 1 nm. A systematic increase of the separated scattering was found due to the increasing Ge concentration. The different preparation techniques show significant differences in the Ge distribution. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1413488
Permalink
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
