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  • 2000-2004  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2285-2288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of hydrogen plasma treatment and postannealing on GaAs solar cells on Si substrates have been investigated. It is found that postannealing temperature is an important parameter to obtain GaAs on Si with a long minority carrier lifetime. The minority carrier lifetime is increased and the deep level concentration is decreased by the hydrogen plasma treatment. Even after 450 °C postannealing with the complete recovery of the shallow impurity level, the minority carrier lifetime is still longer and the deep level concentration is lower than those of the as-grown sample. It means that the defects in GaAs on Si are passivated by hydrogen. The efficiency of GaAs-on-Si solar cell (air mass 0, 1 sun) is improved from 16.6% (as-grown) to 18.3% by the hydrogen plasma passivation and to 17.2% by the hydrogen plasma passivation and postannealing at 450 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372174
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  • 2
    Electronic Resource
    Electronic Resource
    InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 528-530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the characteristics of InGaN multiple-quantum-well (MQW) green light-emitting diodes (LEDs) on Si (111) substrates. The MQW LEDs were grown on Si by metalorganic chemical vapor deposition using Al0.27Ga0.73N/AlN intermediate layers. The LED on Si showed an operating voltage of 7 V, a series resistance of 100 Ω, an optical output power of 20 μW, and a peak emission wavelength of 505 nm with a full width at half maximum of 33 nm at 20 mA drive current. The optical output power was half as compared to that of green LED on sapphire. The LED also exhibited a stable operation over 500 h under automatic current control (20 mA) condition at 27 °C. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408264
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  • 3
    Electronic Resource
    Electronic Resource
    Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1131-1133 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-electron-mobility transistors (HEMTs) have been demonstrated on both AlN/sapphire templates and sapphire substrates, and the dc characteristics of the fabricated devices were examined at room temperature. Better dc characteristics with high extrinsic transconductances and drain current densities were observed in the HEMTs grown on AlN/sapphire templates when compared with the HEMTs on sapphire substrates. Extrinsic transconductances of 214 and 137 mS/mm for Wg/Lg=15/2 μm HEMTs on AlN/sapphire templates and HEMTs on sapphire substrates were achieved, respectively. The enhancement of dc characteristics with small variations in threshold voltage (≤130 mV) is due to the reduction of dislocation density (1.5×108 cm−2). The decrease of dark spot density has been confirmed in the GaN grown on AlN/sapphire templates using cathodoluminescence measurements. The advantage of using AlN/sapphire templates is that low dislocation density GaN layers at a high temperature can be grown without using low-temperature-grown GaN buffer layers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498874
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  • 4
    Electronic Resource
    Electronic Resource
    Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 294-296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of electronic defect states in most forms of amorphous carbon deposited at room temperature is found so far to be very high (1018–1022 spins cm−3). In this letter, we demonstrate that the radio-frequency plasma-enhanced chemical vapor deposited hydrogenated amorphous carbon (a-C:H) thin film exhibits the lowest spin density of the order of 1016 cm−3, investigated by using electron spin resonance (ESR) spectroscopy, a very promising reproducible result comparable with high-quality a-Si:H. In addition, the optical gap of a-C:H has been tailored between a wide range, 1.8–3.1 eV. The ESR spectra of all the films reveal a single Lorentzian line whose linewidth ΔHpp varies strongly with the optical gap. Also, there is a strong dependence of spin density on the optical gap, and we show that this dependency is a direct result of structural changes due to sp3/sp2 carbon bonding network. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1335548
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  • 5
    Electronic Resource
    Electronic Resource
    Highly stressed carbon film coatings on silicon: Potential applications (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2880-2882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly stressed and strongly adhered nanocrystalline diamond films are grown on Si substrates by providing controlled and continuous bias current density (BCD) in microwave plasma chemical vapor deposition system. The stress and hence the curvature of the films on Si substrates can be varied and controlled by changing the BCD. We propose applications for such stressed films in the areas in which bent crystals are being used for various purposes, i.e., particle physics, x-ray optics, etc. These bent Si substrates can replace crystal benders, a cumbersome mechanical arrangement, used for bending Si in those areas. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471379
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3947-3949 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS2 and another GaAs layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of GaAs/Si are almost the same as those of GaAs grown on GaAs substrate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333691
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  • 7
    Electronic Resource
    Electronic Resource
    High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2186-2188 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-electron-mobility transistors (HEMTs) have been demonstrated on both sapphire and semi-insulating (SI) SiC substrates, and the dc characteristics of the fabricated devices were examined at temperatures ranging from 25 to 500 °C. The decrease in drain current and the transconductance with the increase of temperature have been observed. The decrease ratio of transconductance and drain current was similar for both the HEMTs on sapphire and SI–SiC substrates at and above 300 °C. The HEMTs on SiC substrates showed better dc characteristics after being subjected to thermal stress up to 500 °C. Although the SiC-based HEMTs showed better characteristics up to the temperature of 300 °C, compared with the sapphire-based HEMTs, similar dc characteristics were observed on both at and above 300 °C. For high-temperature applications (≥300 °C), additional cooling arrangements are essential for both devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461420
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of optical properties of nitrogen-doped hydrogenated amorphous carbon films by spectroscopic ellipsometry (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3962-3964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen-doped hydrogenated amorphous carbon films have been deposited on silicon substrates by radio-frequency plasma-enhanced chemical vapor deposition using different N2/CH4 gas ratios from 0 to 3. The real and imaginary parts, n and k, of the complex index of refraction of these films have been determined for wavelengths between 300 and 830 nm by spectroscopic ellipsometry. Excellent agreement has been found between measured and modeled spectra, in which an empirical dielectric function based on classical Lorentz oscillator and Tauc joint density of states, and a linear void distribution along the thickness of the films have been assumed. Decrease in the optical energy gap and increase in the extinction coefficient, k, with increase in nitrogen concentration have been observed. Refractive index, n, increases rapidly with increase in nitrogen concentration up to 6.8 at. % (∼7.0 at. %) and then increases slowly with further increase in nitrogen concentration. For all the samples, n is found to be highest at the film-substrate interface which gradually decreases towards the film surface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374501
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