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  • 2000-2004  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4800-4804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diode ideality factor, reverse breakdown voltage, and forward current characteristic were used to measure the effect on electric performance of GaAs rectifiers deposited with thin films of SiNx. Over a broad range of deposition conditions there were minimal changes (〈10%) in breakdown voltage and the cause was hydrogen passivation of Si dopants in the GaAs. Ion-induced damage did not appear to play a significant role in the results. The ideality factors and forward leakage currents were essentially unchanged by the SiNx deposition indicating that the plasma exposure did not create defects states around the periphery of the Schottky contact. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410323
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Vertical and lateral GaN rectifiers on free-standing GaN substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-terminated Schottky rectifiers fabricated on quasibulk GaN substrates showed a strong dependence of reverse breakdown voltage VB on contact dimension and on rectifier geometry (lateral versus vertical). For small diameter (75 μm) Schottky contacts, VB measured in the vertical geometry was ∼700 V, with an on-state resistance (RON) of 3 mΩ cm2, producing a figure-of-merit VB2/RON of 162.8 MW cm−2. Measured in the lateral geometry, these same rectifiers had VB of ∼250 V, RON of 1.7 mΩ cm2 and figure-of-merit 36.5 MW cm−2. The forward turn-on voltage (VF) was ∼1.8 V (defined at a current density of 100 A cm−2), producing VB/VF ratios of 139–389. In very large diameter (∼5 mm) rectifiers, VB dropped to ∼6 V, but forward currents up to 500 mA were obtained in dc measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400771
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 823-825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xN (x=0–0.25) Schottky rectifiers were fabricated in a lateral geometry employing p+-implanted guard rings and rectifying contact overlap onto an SiO2 passivation layer. The reverse breakdown voltage (VB) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al0.25Ga0.75N and 6350 V for GaN, respectively, for 100 μm gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of ≤9.67×105 V cm−1, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (VB)2/RON, where RON is the on-state resistance, was in the range 94–268 MW cm−2 for all the devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346622
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1661-1663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unpassivated AlGaN/GaN high-electron-mobility transistors show significant gate lag effects due to the presence of surface states in the region between the gate and drain contact. Low-temperature (100 °C) layers of MgO or Sc2O3 deposited by plasma-assisted molecular-beam epitaxy are shown to effectively mitigate the collapse in drain current through passivation of the surface traps. These dielectrics may have advantages over the more conventional SiNX passivation in terms of long-term device stability. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455692
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN/GaN high electron mobility transistors (HEMTs) with different gate length and widths were irradiated with 60Co γ-rays to doses up to 600 Mrad. Little measurable change in dc performance of the devices was observed for doses lower than 300 Mrad. At the maximum dose employed, the forward gate current was significantly decreased, with an accompanying increase in reverse breakdown voltage. This is consistent with a decrease in effective carrier density in the channel as a result of the introduction of deep electron trapping states. The threshold voltage shifted to more negative voltages as a result of the irradiation, while the magnitude of the drain–source current was relatively unaffected. This is consistent with a strong increase of trap density in the material. The magnitude of the decrease in transconductance of the AlGaN/GaN HEMTs is roughly comparable to the decrease in dc current gain observed in InGaP/GaAs heterojunction bipolar transistors irradiated under similar conditions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445809
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  • 6
    Electronic Resource
    Electronic Resource
    Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3636-3638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the initial Mg reactivation annealing temperature, surface cleaning treatments, and contact annealing conditions on the specific contact resistance of Ni/Au ohmic contacts on p-GaN are reported. The lowest contact resistances were obtained for 900 °C activation annealing and cleaning steps that reduced the native oxide thickness (i.e., KOH rinsing). Removal of this interfacial oxide reduced the barrier for hole transport, providing a contact resistance of 9×10−4 Ω cm2 for Ni/Au metallization annealed at 500 °C. The use of a ten period p-Al0.1Ga0.9N(Mg)/GaN(Mg) superlattice with individual layer thickness 50 Å led to a specific contact resistance of 9×10−5 Ω cm2 under the same conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423387
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  • 7
    Electronic Resource
    Electronic Resource
    dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN/GaN high electron mobility transistors (HEMTs) with a range of gate lengths (0.8–1.2 μm) and widths (100–200 μm) were exposed to 40 MeV protons at fluences of 5×109 or 5×1010 cm−2. The drain–source currents in the devices decreased by 15%–20% at the higher fluence, while the extrinsic transconductance decreased by ∼30% under the same conditions. Based on the increases in the reverse breakdown voltage and the channel resistance, the main degradation mechanism is believed to be creation of deep trap states in the band gap which remove electrons from the channel. The maximum frequency of oscillation, fMAX, also decreased as a result of the proton-induced damage, with a change of −20% at the shorter gate widths and −50% at the largest widths. The reverse recovery switching time was essentially unaffected by the irradiation, remaining at ∼1.6×10−8 s. Postradiation annealing at 800 °C was successful in restoring the dc and rf performance parameters to ≥90% of their original values. The AlGaN/GaN HEMTs are much more robust than their AlGaAs/GaAs counterparts to displacement damage and appear well-suited to radiation environment applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408606
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  • 8
    Electronic Resource
    Electronic Resource
    Gd2O3/GaN metal-oxide-semiconductor field-effect transistor (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3230-3232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gd2O3 has been deposited epitaxially on GaN using elemental Gd and an electron cyclotron resonance oxygen plasma in a gas-source molecular beam epitaxy system. Cross-sectional transmission electron microscopy shows a high concentration of dislocations which arise from the large lattice mismatch between the two materials. GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using a dielectric stack of single crystal Gd2O3 and amorphous SiO2 show modulation at gate voltages up to 7 V and are operational at source drain voltages up to 80 V. This work represents demonstrations of single crystal growth of Gd2O3 on GaN and of a GaN MOSFET using Gd2O3 in the gate dielectric. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326041
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