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Ga Ohmic contact for n-type diamond by ion implantation (2000)

Teraji, T. ; Koizumi, S. ; Kanda, H.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 1303-1305

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Electric contacts formed on an n-type diamond film by means of the Ga ion implantation were studied. The implanted Ga contacts revealed Ohmic property at room temperature. Contact resistivity for the implanted Ga contacts formed on the diamond film with donor density of 3×1018 cm−3 was 4.8×106 Ω cm2. The value is more than one order smaller than that for conventional vacuum-deposited metal contacts on the same diamond film. This contact has enabled us to measure electric properties for relatively lightly doped n-type diamond films in a temperature range between room temperature and 600 °C. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126016

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