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  • 1
    Electronic Resource
    Electronic Resource
    Cysteinyl leukotriene-dependent interleukin-5 production leading to eosinophilia during late asthmatic response in guinea-pigs (2002)
    Oxford, UK : Blackwell Science Ltd
    Clinical & experimental allergy 32 (2002), S. 0 
    Details
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background Allergic airway eosinophilia is suppressed by cysteinyl leukotriene (CysLT) receptor (CysLT1 receptor) antagonists in several species including humans and guinea-pigs, suggesting that CysLTs are directly or indirectly involved in induction of the response.Objective We examined the effect of CysLT antagonists (pranlukast and MCI-826) on antigen inhalation-induced eosinophilia in peripheral blood and lung, and on IL-5 activity in serum during late increase of airway resistance (late asthmatic response, LAR) in sensitized guinea-pigs.Methods Guinea-pigs inhaled ovalbumin (OVA) + Al(OH)3 and OVA mists alternately for sensitization and challenge, respectively, once every 2 weeks. At the fifth challenge, the effects of CysLT antagonists and an anti-IL-5 antibody (TRFK-5) on the occurrence of LAR, and blood and lung eosinophilia, which appeared at 5 h after challenge, were examined. The time-course of IL-5 activity in the serum after the challenge was evaluated by measuring in vitro‘eosinophil survival prolongation activity’. The influence of CysLT antagonists on IL-5 activity was assessed.Results CysLT antagonists and TRFK-5 completely abolished blood and lung eosinophilia. LAR was suppressed by both MCI-826 and TRFK-5 by 40–50%. Sera obtained from sensitized, challenged animals 3 h and 4 h after challenge induced an obvious prolongation of eosinophil survival. The activity of the sera was completely neutralized by prior exposure to TRFK-5, suggesting that it reflected IL-5 activity. Increased IL-5 activity in the serum was inhibited by both pranlukast and MCI-826 by over 90%.Conclusions CysLTs produced after antigen provocation sequentially induced IL-5 production from some immune component cells via CysLT1 receptor activation. Thus, it is likely that CysLTs indirectly cause antigen-induced eosinophilia through IL-5 production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.0954-7894.2002.01329.x
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  • 2
    Electronic Resource
    Electronic Resource
    Ferroelectric behavior of epitaxial Bi2VO5.5 thin films on Si(100) formed by pulsed-laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1193-1195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of Bi2VO5.5 have been prepared epitaxially using a pulsed-laser deposition method on a Si(100) substrate using TiN as a buffer layer and SrTiO3 as a seed layer. The films have smooth surface morphology with atomically flat terraces and steps of 4 Å in height. The ferroelectric characterization shows a spontaneous polarization of 2.2 μC/cm2 and a coercive field (Ec) of 22 kV/cm. The leakage current obtained is about 5×10−6 A/cm2 at a drive voltage of ±2 V. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373798
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  • 3
    Electronic Resource
    Electronic Resource
    Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6598-6604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown YMnO3 (YMO) thin films on Si(111) using silicon oxynitride (SiON) as a buffer layer. Thickness of SiON buffer layer was well controlled within 2 nm. High resistance of ultrathin SiON layer (dSiON∼0.7 nm) to Si oxidation was confirmed by x-ray photoelectron spectroscopy (XPS). Using the ultrathin SiON layer, we obtained c-axis oriented ferroelectric phase of YMO. Although capacitance–voltage curves of Al/YMO/SiON/Si(111) showed hystereses attributed to ferroelectricity of the YMO films, the memory window was not sufficient (0.2 V), seemingly due to poor crystallinity of the YMO films. On the other hand, leakage current characteristic was good enough for application. The typical value of leakage current density was 10−8 A/cm2 at a drive voltage of ±5 V. In this article, the details of the characterization elucidated by using x-ray diffraction, atomic force microscopy, and XPS will be shown as well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315614
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the optimal cation composition of ferroelectric (ZnxCd1−x)S thin films for applications to silicon-based nonvolatile memories (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3180-3182 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of ferroelectric binary mixed II–VI compounds such as (ZnxCd1−x)S, as well as (ZnyCd1−y)Te and (ZnzCd1−z)Se (0≤x,y,z≤1), were examined from the standpoint of the application to Si-based nonvolatile memories. Electronic-band discontinuities at the ferroelectric–Si interface decreased significantly with increase in the atomic number of the constituent chalcogenide atoms, which favored (ZnxCd1−x)S as the most potential gate ferroelectrics among the three compounds. Polarization-field (P–E) characteristics of the (ZnxCd1−x)S films were found to largely depend on the cation composition. No hysteretic behaviors in the P–E curves were observed for high-Zn concentrations above x=0.5, while the P–E curves traced hysteretic loops due to the ferroelectricity for x〈0.5. The remnant polarization was greatly dependent on the Zn concentration, and yielded a maximum of 0.03 μC/cm2 for x=0.3. On the other hand, the coercive field was not composition dependent, and was approximately 12 kV/cm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476710
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  • 5
    Electronic Resource
    Electronic Resource
    Interface control of Bi4Ti3O12 film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1858-1860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of Bi4Ti3O12 (BiT) films on Si(100) were improved due to insertion of silicon oxynitride (SiON) buffer layers with thicknesses of 1–2 nm. Capacitance–voltage measurements indicated that the improvement was largely attributable to better Si interface properties rather than to the difference of the BiT film quality. By means of x-ray photoelectron spectroscopy and high-resolution transmission microscopy, the Si interfaces of the specimens with and without the SiON buffer layers were investigated. Consequently, we found that a postannealing treatment at 680 °C inevitably resulted in nonuniform growth of Si oxide layers at the Si interface of the specimen without the SiON buffer layer, and that the layer thickness mounted to approximately 10 nm. In contrast, 1–2-nm-thick SiON buffer layers terminated the growth of the additional oxide layer of less than about 3 nm, and the resulting Si oxide layers were quite uniform. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400078
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  • 6
    Electronic Resource
    Electronic Resource
    Optimization of electronic-band alignments at ferroelectric (ZnxCd1−x)S/Si(100) interfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3283-3285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained ferroelectric characteristics from nonoxide (ZnxCd1−x)S (x=0.1–0.3) thin films. On the basis of x-ray photoelectron and visible–ultraviolet light absorption spectroscopy measurements, the conduction-band discontinuity at the (ZnxCd1−x)S/Si(100) interfaces is found to vary between 0.4 and 1.3 eV with a change in composition x between 0.1 and 0.9. The leakage current density, which strongly depends on the conduction-band discontinuity, is reduced to less than 10−6 A/cm2 at a gate voltage of 4 V. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356724
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  • 7
    Electronic Resource
    Electronic Resource
    Photocontrol of spin-glass state in Mg1.5FeTi0.5O4 spinel ferrite films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A spin-glass state up to 210 K has been found in (Mg, Fe){Mg,Fe,Ti}2O4 spinel ferrite thin films formed on α-Al2O3(0001) substrates. The films exhibit long-time relaxation of the magnetization in zero-field-cooled operation below 210 K; also, the ac susceptibility measurements show the presence of frequency-dependent cusp temperature. Both of the above observations are characteristic features of a spin glass. The change of magnetic state in the films from a spin glass to ferrimagnet has been achieved over a wide temperature range below 160 K by means of light irradiation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125975
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  • 8
    Electronic Resource
    Electronic Resource
    Two-dimensional assembly of gold nanoparticles with a DNA network template (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1181-1183 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold nanoparticles have been assembled into two-dimensional complexes using a DNA network template. Atomic force microscope images indicate that gold nanoparticles can be artificially arranged using a DNA molecular template with an average separation of 260 nm. Furthermore, the pattern of the complex can be controlled by changing the concentration of the DNA solution. The results suggest that this method is effective in achieving positional control of nanoscale arrangements for a wide range of applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396630
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  • 9
    Electronic Resource
    Electronic Resource
    Spin-polarized scanning tunneling microscopy on half-metallic manganite thin film with half-metallic manganite tip (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4378-4380 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-polarized tunneling was demonstrated on La0.7Sr0.3MnO3 epitaxial thin film with a La0.7Sr0.3MnO3-coated PtIr tip at room temperature. A magnetic-field-dependent gap structure was found in the differential tunneling spectra due to the spin-valve effect. The spatial mapping of the differential tunneling conductance shows strongly contrasting variations, which demonstrates the presence of magnetic domains with different spin alignments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1375832
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 403-405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of ferroelectric Bi4Ti3O12 (BiT) films on Si(100) using a 1 nm thick silicon oxynitride (SiON) buffer were investigated. The capacitance–voltage (C–V) characteristics of Au/BiT/SiON/Si(100) exhibited hysteresis loops with a memory window of 2 V due to the ferroelectricity, and did not show large carrier injections. The effects of the SiON buffer were demonstrated in current–voltage characteristics. In the reverse bias region, a leakage current density of the specimen without the SiON buffer was much larger than that of the specimen with the buffer. Apart from these electrical measurements, anomalous features appeared in C–V characteristics of the illuminated specimen, which were likely to be due to the ac response of the optically generated electrons in some trap states at the interface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385799
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