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  • 1
    Electronic Resource
    Electronic Resource
    Evolution of the surface morphology of Fe grown on GaAs (100), (311)A, and (331)A substrates by molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 169-173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the growth of Fe by molecular beam epitaxy on GaAs (100), (311)A, and (331)A substrates in dependence on the termination (reconstruction) of the GaAs surface and Fe growth temperature. Crystal quality and surface morphology of the 20- and 160-nm-thick Fe layers are characterized by double-crystal x-ray diffraction and atomic force microscopy. On GaAs (100) substrates we obtain very smooth Fe layers for As-rich surface reconstructions at a growth temperature of 50 °C. Less As-rich surface reconstructions produce macroscopic defects whose density increases on more Ga-rich surface reconstructions. On GaAs (311)A and (331)A substrates smooth layers with good crystal quality are obtained at 0 °C. The high density of macroscopic defects in these Fe layers is again eliminated on As-saturated surfaces. The evolution of the Fe surface morphology on the micron-length scale and the successful elimination of macroscopic defects on As-saturated GaAs substrates is highly relevant for application of these layers, in particular, their integration with the unique lateral semiconductor nanostructures formed on high-index GaAs (311)A and (331)A substrates. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330556
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  • 2
    Electronic Resource
    Electronic Resource
    Shape transition of coherent three-dimensional (In,Ga)As islands on GaAs(100) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4219-4221 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The shape transition of coherent three-dimensional (3D) islands is observed experimentally in the (In,Ga)As/GaAs(100) material system. In the molecular-beam epitaxy of a 1.8-nm-thick In0.35Ga0.65As single layer, we find that the shape of the coherent 3D islands transforms from round to elongated when increasing the growth temperature. A quantitative agreement of our experimental data with the theoretical work of Tersoff and Tromp is achieved. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428107
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  • 3
    Electronic Resource
    Electronic Resource
    Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1297-1299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352047
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  • 4
    Electronic Resource
    Electronic Resource
    Hepatocyte nuclear factor 4α controls the development of a hepatic epithelium and liver morphogenesis (2003)
    [s.l.] : Nature Publishing Group
    Nature genetics 34 (2003), S. 292-296 
    Details
    ISSN: 1546-1718
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] Although advances have been made in understanding cell differentiation, only rudimentary knowledge exists concerning how differentiated cells form tissues and organs. We studied liver organogenesis because the cell and tissue architecture of this organ is well defined. Approximately 60% of the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/ng1175
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  • 5
    Electronic Resource
    Electronic Resource
    Forest planning at the tactical level (2000)
    Springer
    Annals of operations research 95 (2000), S. 3-18 
    Details
    ISSN: 1572-9338
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Economics
    Notes: Abstract Forest management and planning can involve large tracts of land involving numerous areal units. One approach to plan activities for a forested region over decades involves breaking down decision making into three components: strategic, tactical, and operational. Each level of the management hierarchy can involve the development and application of optimization models. These models typically aid in exploring management alternatives as well as multi-objective tradeoffs. Even though a strategic model can provide support for long term management at a broad scale, solutions may not be feasible at an operational level. Tactical level modeling helps to bridge solutions reached at a strategic level using operational planning information. This paper presents several tactical level planning models that have been developed as a part of a research effort supported by the US Forest Service. These models have been utilized in land use management and planning by the US Forest Service through a specially developed spatial decision support system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018922728855
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  • 6
    Electronic Resource
    Electronic Resource
    Trace Analysis by Heavy Ion Induced X-Ray Emission (2000)
    Springer
    Microchimica acta 133 (2000), S. 313-317 
    Details
    ISSN: 1436-5073
    Keywords: Key words: PIXE; heavy ion X-ray production cross sections; trace analysis ; PACS: 32.80Hd.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract.  Various K-, L- and M-shell X-ray production cross sections are measured for heavy ion impact on elements in the range Z 2 = 13 to 83. The ion species range from Z 1 = 10 to 36, and ion energies from 1 to 16 MeV are used. Enhanced cross sections are observed when the projectile K- or L- binding energy is similar to the energy of the target K-, L- or M-shell. This effect is used to improve the analysis sensitivity for selected elements. As an example trace analysis of Fe in glass with V, Mn, Co and Ni ions is investigated. Results are compared with proton induced X-ray emission analysis on the same samples. In these samples Fe-Kα X-ray production is similar for irradiation with 3 MeV protons and 14 MeV Ni ions. However the signal to background ratio is four times higher for the irradiation with Ni ions as compared to irradiation with protons. Advantages and drawbacks of heavy ion induced X-ray emission for quantitative analysis compared to proton induced X-ray emission analysis are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s006040070112
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