ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a novel semiconductor quantum well (QW) structure consisting of alternating (In,Ga)As and Ga(P,As,Sb) layers grown pseudomorphically on a GaAs substrate by all-solid-source molecular beam epitaxy. The band gap of the QW is determined by the thickness and composition of both types of layers and can be varied from 1.1 to 1.55 μm. Calculations show that the observed strong room-temperature photoluminescence in this wavelength range can be explained by a type-II transition in the QW. Structural investigations by reflection high-energy electron diffraction, transmission electron microscopy, and secondary ion mass spectroscopy confirm a triple layer structure with laterally modulated composition. Photoluminescence measurements reveal a linewidth of 50 meV at 1.3 μm and a luminescence decay time of 240 ps. Our investigations demonstrate the feasibility of this materials system for vertical cavity surface-emitting lasers and other optoelectronic devices on GaAs. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1287233
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