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  • 2000-2004  (2)
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  • 1
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background A recent report provided evidence that a disintegrin and metalloprotease domain 33 (ADAM33), a member of the ADAM family, is a novel susceptibility gene in asthma linked to bronchial hyper-responsiveness. However, there has been no investigation of the genetic role of ADAM33 variants in nasal allergy.Objective The purpose of this study was to test the association between ADAM33 polymorphisms and Japanese cedar pollinosis (JCPsis), a most common seasonal allergic rhinitis in Japan.Methods We conducted a case–control association study among a Japanese population, involving 95 adult individuals with JCPsis and 95 normal healthy controls. A total of 22 single-nucleotide polymorphisms (SNPs) in ADAM33 were genotyped using PCR-based molecular methods.Results Six SNPs of ADAM33 gene, three in introns (7575G/A, 9073G/A and 12540C/T) and three in the coding region (10918G/C, 12433T/C and 12462C/T), were strongly associated with JCPsis (P=0.0002−0.022 for absolute allele frequencies) and most of the SNPs were in linkage disequilibrium with each other. A higher frequency of the common alleles of these SNPs was noted for the subjects with JCPsis in comparison with healthy controls. We also identified a haplotype associated with the disease susceptibility. In addition, associations were found between ADAM33 polymorphisms and various cedar pollinosis phenotypes including clinical severity, eosinophil counts in nasal secretion and allergen-specific IgE levels in sera, but not total serum IgE levels.Conclusion These results indicate that polymorphisms in the ADAM33 gene are associated with susceptibility to allergic rhinitis due to Japanese cedar pollen, but the functional relationship still needs clarification.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2330-2332 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature processing for high-performance solar cells based on hydrogenated microcrystalline silicon (μc-Si:H) has been developed using a conventional rf plasma-enhanced chemical vapor deposition (PECVD) technique at an excitation frequency of 13.56 MHz under a high deposition pressure condition. Among pin type solar cells, it is found that deposition temperature of i-layer at 140 °C is effective particularly for improving open circuit voltage (Voc), surprisingly without deteriorating short circuit current or fill factor. Carrier density of undoped μc-Si abruptly decreases for deposition temperatures lower than 180 °C, and the improvement of Voc is ascribed to a decrease of shunt leakage current arising from the oxygen-related donors. This implies that oxygen-related donors can be passivated at low deposition temperatures and that hydrogen plays an important role for the passivation. We propose a simple model for the hydrogen passivation of oxygen related donors. We apply this passivation technique to solar cells, and consequently a conversion efficiency of 8.9% (Voc=0.51 V, Jsc=25 mA/cm−1, FF=0.70) has been obtained in spite of an oxygen concentration of 2×1019 cm−3 in combination with device optimization such as a p-layer. Effect of deposition temperature of i-layer upon other solar cell parameter, short circuit current, and fill factor is also discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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