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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Comparison between ZnO films grown by femtosecond and nanosecond laser ablation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 690-696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the structural properties of ZnO thin films grown on Al2O3 (00.1) single-crystal substrates by pulsed-laser deposition using either a femtosecond or a nanosecond laser. Although hexagonal ZnO films deposited on sapphire substrate were epitaxially grown in both cases, the crystalline quality was found to be very different: ZnO films grown with the femtosecond laser are characterized by a higher mosaicity, a smaller crystallite size, a larger content of defects but also smaller residual stresses than ZnO films obtained by nanosecond laser ablation. These differences can be explained according to the kinetic energy of the species evolved during laser ablation as deduced from plasma characterization with a charged-coupled device camera: close to 1 KeV in the femtosecond regime for the population species emitted from the target with the highest velocity, versus a few hundreds of eV in the case of nanosecond pulses. The high energy species irradiation associated with a femtosecond laser is likely to induce a large structural disorder together with stress relaxation during ZnO films growth. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426250
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of heteroepitaxial ZnO thin films by femtosecond pulsed-laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6937-6939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO thin films have been grown on various substrates by femtosecond pulsed-laser deposition. According to optical microscopy and atomic force microscopy analyses, the production of droplets is not significant using femtosecond pulses. Smooth, dense, stoichiometric, crystalline, and textured hexagonal ZnO films are epitaxially grown on (0001) sapphire at 700 °C with an in-plane epitaxial relationship corresponding to a 30° rotation of the ZnO basal plane with respect to the sapphire. Nevertheless, channeling experiments and rocking curve measurements show that the crystalline quality is not as good as that obtained with nanosecond pulses. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324679
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    Paper (German National Licenses)
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