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  • 1
    Electronic Resource
    Electronic Resource
    Influence of doping on the emission and scintillation characteristics of PbWO4 single crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4243-4248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray excited luminescence spectra, wavelength-resolved thermoluminescence glow curves, ultraviolet and 22Na excited emission decays, and 60Co excited light yield were measured on a set of high purity (99.9999%) PbWO4:X (X=Lu3+, Y3+, Gd3+, Sc3+, Nb5+, Pb2+) samples grown in an equivalent way. Positive influence of trivalent doping (Lu, Gd, Y) was noted, which consists in suppressing the deeper trapping states in the PbWO4 structure. Such states are related to the radiative recombination processes in the green and red part of the spectra. The presence of the green emission centers also results in the increase of the slow recombination decay components in the microsecond time scale. High concentration of the dopant ions (670 atomic ppm for PbWO4:Nb) results in the creation of new nonradiative recombination sites, which suppress the recombination decay components and the light yield as well. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373060
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  • 2
    Electronic Resource
    Electronic Resource
    Complete characterization of doubly doped PbWO4:Mo,Y scintillators (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2791-2797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present correlated measurements of radioluminescence, photoluminescence, and thermoluminescence, as well as the measurements of decay kinetics both under ultraviolet and 22Na(511 keV) photon excitations for Mo-doped and doubly (Mo,Y)-doped PbWO4 single crystals. A wide concentration range of Mo doping (200–50 000 ppm) is covered. Y codoping results in significant suppression of trapping states induced by the Mo doping. Consequently, an improvement of temporal characteristics, such as acceleration of the scintillation decay process, of doubly doped material with respect to Y-free crystals, is achieved. For the optimum Mo concentration (2750–10 000 ppm), the temporal characteristics are fully comparable to an undoped PbWO4, while the light yield is increased by a factor of 2.2. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436561
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced efficiency of PbWO4:Mo,Nb scintillator (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5041-5044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Nb codoping on the optical properties of the PbWO4:Mo scintillator is investigated by radio- and thermoluminescence, scintillation decay, and light yield measurements. Steady-state radioluminescence efficiency of PbWO4:Mo,Nb with optimized doping concentrations (2750 and 350 molar ppm, respectively) becomes up to 20 times higher with respect to that of undoped PbWO4 and is comparable to that of Bi3Ge4O12. However, slow components down to several tens of microseconds appear in the time decay. Their existence may be related to the presence of traps monitored by thermoluminescence. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462420
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  • 4
    Electronic Resource
    Electronic Resource
    Efficient radioluminescence of the Ce3+-doped Na–Gd phosphate glasses (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2159-2161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo- and radioluminescence, decay kinetics, and thermoluminescence are reported for a set of Ce3+-doped phosphate glasses. The presence of Gd3+ ions in the glass host matrix at concentrations above 20% enhances the energy transfer towards the Ce3+ emission centers, which results in a remarkable enhancement of the radioluminescence light output. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315337
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature behaviour of optical properties of Si -implanted SiO (2000)
    Springer
    The European physical journal 8 (2000), S. 395-398 
    Details
    ISSN: 1434-6079
    Keywords: PACS. 78.55.Hx Other solid inorganic materials - 61.46.+w Clusters, nanoparticles, and nanocrystalline materials - 78.45.+h Stimulated emission
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: Silicon nanocrystals were prepared by Si+-ion implantation and subsequent annealing of SiO2 films thermally grown on a c-Si wafer. Different implantation energies (20-150 keV) and doses - cm -2 ) were used in order to achieve flat implantation profiles (through the thickness of about 100 nm) with a peak concentration of Si atoms of 5, 7, 10 and 15 atomic%. The presence of Si nanocrystals was verified by transmission electron microscopy. The samples exhibit strong visible/IR photoluminescence (PL) with decay time of the order of tens of μs at room temperature. The changes of PL in the range 70-300 K can be well explained by the exciton singlet-triplet splitting model. We show that all PL characteristics (efficiency, dynamics, temperature dependence, excitation spectra) of our Si+-implanted SiO2 films bear close resemblance to those of a light-emitting porous Si and therefore we suppose similar PL origin in both materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100530050049
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