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Diffusion properties of Al in ZnTe substrates (2001)

Hanafusa, M. ; Sato, K. ; Noda, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 1989-1990

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: In order to fabricate intrinsic pn junctions in p-type ZnTe substrates for realizing pure-green light-emitting diodes, Al was used as the diffusion species. We found that the Al diffusion region is observed as a dark region image by scanning electron microscopy. Al was diffused over a wide range of annealing temperatures and times. It was found that the activation energies of Al diffusion into p-type ZnTe substrates were 1.9±0.1 eV and the diffusion coefficient was given by D=20 exp(−1.9/kT) cm2/s. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1287235

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