Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (4)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2515-2517 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy crystals were grown by ultra-high-vacuum chemical-vapor deposition and their thermal-annealing behaviors were studied by infrared (IR) absorption measurements. The present samples exhibited absorption peaks originating from local vibrational modes of substitutional C atoms with two different atomic configurations; one is a C atom with four Si neighbors (Si4 configuration) and the other is with one Ge and three Si neighbors (Si3Ge1 configuration). As the annealing temperature was increased from 700 to 950 °C, the absorption peak of the C atoms with Si3Ge1 configuration increased in intensity. This clearly demonstrated that thermal annealing leads to the formation of Ge–C bonds. Moreover, the composition dependence of the IR spectra suggested that Ge–C bonds are formed to reduce the strain energy of the Si1−x−yGexCy crystals. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3126-3128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN/GaN heterostructure devices have recently been attracting much attention because of their potential for high-performance microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures have recently been discussed. We studied the magnetoresistance oscillation of the 2DEG at 0.4 K for various backgate voltages, and observed multiple oscillations resulting from spin splitting. The magnetoresistance shows clear beating due to the superposition of three oscillations. The frequency interval between the first and second largest frequencies is proportional to the total electron concentration and the measured spin-orbit interaction parameter agrees with the theoretical one. Therefore, the first and second largest frequencies are found to correspond to spin splitting by the spin-orbit interaction. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3962-3964 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy crystals were grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD) using Si2H6, GeH4, and SiH3CH3 as source gases. Although the total C content in the grown crystals increased with increasing the partial pressure of SiH3CH3 gas, the substitutional C content saturated at a certain value. The maximum substitutional C content was found to change depending on the Ge content. As the Ge content was increased from 13 to 35 at. %, the maximum substitutional C content linearly decreased from 2.0 to 0.8 at. %. These results clearly demonstrate that the existence of Ge atoms prevents the substitutional incorporation of C atoms in Si1−x−yGexCy growth by CVD. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Aim : To investigate the inhibitory effects on gastric acid secretion of three proton pump inhibitors, omeprazole, lansoprazole and rabeprazole, using a three-way crossover design in healthy Helicobacter pylori-negative,S-mephenytoin 4′-hydroxylase (CYP2C19) homo- and hetero-extensive metabolizers.Methods : Eight healthy Japanese male volunteers were enrolled. After the administration of rabeprazole (10 mg/day), lansoprazole (30 mg/day) or omeprazole (20 mg/day), intragastric pH monitoring was commenced from 24 h before the first proton pump inhibitor dose, and continued for days 1–3 after proton pump inhibitor administration. The pH electrode was used for 48 h and changed just before pH monitoring on day 2.Results : For the administration of 10 mg/day rabeprazole, the mean ratios of the 24-h pH ≥ 3 holding timewere 5.7 ± 1.1%,13.6 ± 2.2%, 35.3 ± 2.7% and 62.8 ± 3.1% for the pre-treatment day and days 1, 2 and 3, respectively. The same ratios for lansoprazole (30 mg/day) were 5.7 ± 0.7%, 7.4 ± 1.5%, 13.6 ± 3.4% and 26.6 ± 4.9%; the same ratios for 20 mg/day omeprazole were 5.9 ± 0.9%, 6.1 ± 1.2%, 11.4 ± 2.8% and 16.4 ± 4.6%. The mean ratio of the 24-h pH ≥ 3 holding time of days 1–3 increased significantly compared to the pre-treatment day (P 〈 0.01) with the administration of rabeprazole and lansoprazole. The magnitude of inhibition of gastric acid secretion after rabeprazole administration was stronger than that after lansoprazole. A significant elevation of the mean ratio of the 24-h pH ≥ 3 holding time was demonstrated on days 2 and 3 with omeprazole (P 〈 0.01).Conclusions : In H. pylori-negative CYP2C19 extensive metabolizers, rabeprazole (10 mg/day) shows a faster onset of rising intragastric pH and a stronger inhibition of gastric acid secretion than do lansoprazole (30 mg/day) or omeprazole (20 mg/day).
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...