Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1851-1853
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In situ photoluminescence (PL) and transmission IR spectral measurements have been carried out for porous Si (PS) after exposure to thermoelectrons and subsequent exposure to D atoms or D2O. Upon exposure to thermoelectrons the PL band (765 nm) of the PS almost diminished accompanied by the intensity reduction of the IR bands due to Si-Hx (x=1–3) species. A subsequent D atom exposure resulted in a recovery of the PL band with the formation of Si-Dx bonds. In contrast, D2O exposure gave rise to a new PL band at 650 nm in addition to a 745 nm band accompanied by the emergence of IR bands due to Si-OD and Si-D bonds: the integrated PL intensity after the D2O exposure is 1.2 times larger than the PL intensity of the as-anodized PS. These results suggest that the PL of the PS contains an important contribution from the surface Si-O bonds. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126189
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