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  • 2000-2004  (4)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3021-3023 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed a significant reduction in the temperature dependence of the absorption-edge energy in GaNxAs1−x alloys with x〈0.04. The effect has been analyzed in terms of the recently introduced band anticrossing model that considers a coupling of the temperature-independent localized states of substitutional nitrogen atoms and the temperature-dependent extended states of GaAs. The model explains very well the alloy composition and the temperature dependence of the absorption-edge energy. We also compare the parameters that determine the temperature dependence of the band-gap energies in GaNAs and GaInNAs alloys. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322633
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hole activation from GaAs:Zn nanoclusters for p-type conduction in ZnSe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1701-1703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of p-type ZnSe has been limited to nitrogen doping in molecular-beam epitaxy. As an alternative to nitrogen doping, GaAs cluster doping is proposed in this letter, where GaAs has small lattice mismatch of 0.28% to ZnSe and can potentially be heavily doped in p type. Hole activation to the valence band of the ZnSe layers could be observed by the reduction of the thickness of the GaAs layers in order to form nanoclusters. This was achieved with alternate supplies of triethylgallium and trisdimethylaminoarsenic, and the net acceptor concentration of ∼1017 cm−3 was observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126141
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Single-crystalline rocksalt CdO layers grown on GaAs (001) substrates by metalorganic molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 470-472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the growth of single-crystalline rocksalt CdO layers on (001) GaAs substrates using ZnS buffer layers. The growth processes of CdO layers were studied by reflection high-energy electron diffraction (RHEED), and the grown CdO layers were evaluated with atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements. After an initial growth delay, the formation of polycrystalline CdO was observed in RHEED measurements during the initial growth of very thin CdO layers. With the increase of the CdO layer thicknesses, streaky RHEED patterns were observed, which indicate the formation of single-crystalline cubic-phase CdO layers. Surface morphology of the CdO layers observed by AFM was atomically flat with root-mean-square roughness of ∼1 nm. The crystalline structures were elucidated from XRD measurements by the determination of the lattice constant to be 4.686±0.001 Å, indicating the single-phase rocksalt CdO structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1387258
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  • 4
    Electronic Resource
    Electronic Resource
    SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 457-460 (June 2004), p. 407-410 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.457-460.407.pdf
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