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  • 2000-2004  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    Test of response linearity for magnetic force microscopy data (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1256-1261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The utility of vertical propagation by the Green's function to test response linearity has been explored for magnetic force microscopy (MFM) data from current-carrying wires, by comparing the measured signal at various tip heights to the corresponding propagated MFM signals. Application of a one-dimensional Green's function was found to be sufficient to predict signal height variation for sample regions of high to moderate field symmetry. For regions of high field asymmetry, the two-dimensional Green's function was required to obtain good prediction of the height variation. Agreement between the measured and propagated signals was generally within 5%, except at the tails where the signal is not well behaved. The quality of agreement deteriorates gradually with the size of the height propagation. The good agreement spanning a decade of tip and sample separation suggests that the MFM signal is not significantly affected by nonlinearities and can thus be interpreted in terms of classical electromagnetic relations governing current flow. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489701
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  • 2
    Electronic Resource
    Electronic Resource
    Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1477-1481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage-modulated scanning force microscopy (Piezoresponse microscopy) is applied to investigate the domain structure in epitaxial PbZr0.2Ti0.8O3 ferroelectric thin films grown on (001) SrTiO3. By monitoring the vertical and lateral differential signals from the photodetector of the atomic force microscope it is possible to separate out and observe the out-of-plane and in-plane polarization vectors in the thin film individually. The relative orientation of the polarization vectors across a 90° domain wall is observed. Nucleation of new reversed 180° domains at the 90° domain wall is studied and its impact on the rotation of polarization within the a domain is analyzed as a function of reversal time. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421219
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  • 3
    Electronic Resource
    Electronic Resource
    Direct imaging of a biased p-n junction with conductance mapping (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3745-3749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report characterization of Si p-n junction arrays using simultaneous conductance imaging and constant current mode (topographical) scanning tunneling microscopy imaging over a range of reverse bias conditions. Both constant current and conductance imaging of the electrically different regions (n, p, and inverted region) show a pronounced dependence on applied p-n junction bias. Tunneling spectra measured across the p-n junction show that the conductance contrast agrees well with the expected variation due to tip-induced band bending. Taken in combination with the topographical image, conductance images can be used to characterize spatial variations of carrier densities across the device. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1453507
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  • 4
    Electronic Resource
    Electronic Resource
    Model for doping-induced contrast in photoelectron emission microscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 469-475 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model that describes doping-induced contrast in photoelectron emission microscopy by including the effect of surface state distributions and doping-induced band gap reduction. To quantify the contrast, the photoyield from the valence band for near-threshold photoemission is calculated as a function of p-type doping concentration in Si(001). Various surface state distributions appropriate for a native-oxide covered Si device are investigated in order to determine the effect on doping-induced contrast. The lower limit on the number of surface states necessary for doping-induced contrast to occur is approximately 5×1013 cm−3. An interesting result is that neither the position nor the energy distribution of the surface donor states affects the contrast, which corresponds to approximately a factor of 2 change in intensity for each decade change in doping density. However, the overall intensity increases with any one of: increased surface state density, narrowing of surface state distribution, or increased energy of surface states with respect to the valence band. The band bending profile generated by the model predicts that doping-induced contrast will be affected by varying the incident photon energy. Experimentally, we verify this prediction by imaging with photon energies between 4.5 and 5.2 eV. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423399
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  • 5
    Electronic Resource
    Electronic Resource
    Photon energy dependence of contrast in photoelectron emission microscopy of Si devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3547-3549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376151
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of current crowding near fabricated voids in gold lines (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2661-2663 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial variation of current density in lines with model void defects fabricated using focused-ion beam milling has been imaged using magnetic force microscopy (MFM). At current densities of 3–4×106 A/cm2, an asymmetry in the MFM signal is clearly visible at (1×1) μm2 and (0.5×0.5) μm2 notches at the edge of a 10 μm wide line. Comparison to a simple model calculation suggests that the asymmetry is due to current crowding, with the displaced current 70% localized to within 1μm of the notch. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368190
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  • 7
    Electronic Resource
    Electronic Resource
    Domain nucleation and relaxation kinetics in ferroelectric thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3275-3277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-dependent relaxation of the remanent polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O3) ferroelectric thin films, containing a uniform two-dimensional grid of 90° domains (c axis in the plane of the film), is examined using piezoresponse microscopy. The 90° domain walls preferentially nucleate the 180° reverse domains during relaxation, with a significant directional anisotropy. Relaxation occurs through the nucleation and growth of reverse domains, which subsequently coalesce and consume the entire region as a function of time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322051
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