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“Sandwich Technique” via Right Ventricle Incision to Repair Postinfarction Ventricular Septal Defect (2004)

Isoda, S. ; Imoto, K. ; Uchida, K. ; [et al.]

350 Main Street , Malden , MA 02148-5020 , USA and 9600 Garsington Road , Oxford OX4 2XG , England . : Blackwell Science Inc

Journal of cardiac surgery 19 (2004), S. 0

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ISSN: 1540-8191

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Medicine

Notes: Abstract We describe two cases where postinfarction ventricular septal defect (VSD) was treated with a new technique. Application of direct ultrasonography to the right ventricular (RV) wall enables the surgeon to visualize the region and perform appropriate incision into the right ventricle and trabecula resection. The VSD is sealed with gelatin–resorcin–formal (GRF) glue between two patches, one placed on the left ventricular side and the other on the right ventricular side. RV incision provides easy bleeding control and the “sandwich technique” using two patches and GRF sealing provides geometric preservation of the left ventricular shape and prevents residual shunt. (J Card Surg 2004;19:149-150)

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1111/j.0886-0440.2004.04028.x

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Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition (2001)

Ueda, K. ; Hase, T. ; Yanagi, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 1790-1793

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Transparent p-type conducting CuGaO2 thin films were prepared on α-Al2O3 (001) single-crystal substrates by pulsed laser deposition. The films were grown epitaxially on the substrates in an as-deposited state. X-ray pole figure analysis revealed that the films were composed of two types of epitaxial grains, both with c axes oriented perpendicular to the surface and a axes rotated 60° with respect to each other around the c axis. Observation of the CuGaO2 thin films by atomic force microscopy and high-resolution transmission electron microscopy substantiated this conclusion. The films have high optical transparency (∼80%) in the visible region, and the energy gap of CuGaO2 for direct allowed transition was estimated to be 3.6 eV. p-type conductivity was confirmed by Seebeck and Hall measurements. The electrical conductivity, carrier (positive hole) density, and Hall mobility of the films at room temperature were 6.3×10−2 S cm−1, 1.7×1018 cm−3, and 0.23 cm2 V−1 s−1, respectively. © 2001 American Institute of Physics.