ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs(100) by metalorganic chemical vapor deposition has been investigated. By examining the dependence of photoluminescence on the excitation intensity (which varied over four orders) at room temperature, four different emissions with different origins were identified. A blue emission at ∼3.037 eV was associated with a shallow Mg acceptor, while three different lower-energy emissions at ∼2.895, ∼2.716, and ∼2.639 eV were associated with a deep Mg complex. In addition to a shallow acceptor at E≅0.213 eV, three Mg-related deep defect levels were also found at around 215, 374, and 570 meV (from the conduction band). © 2000 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.372139
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