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  • 1
    Electronic Resource
    Electronic Resource
    Rovibrational structures of the pseudorotating lithium trimer 21Li3: Rotationally resolved spectroscopy and ab initio calculations of the A 2E″←X 2E′ system (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 7414-7431 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Based on resonant two-photon ionization of 21Li3 with cw lasers and mass-selective detection of 21Li3+ ions by a quadrupole mass spectrometer, isotope-selective rotationally resolved spectra of vibronic bands in the electronic A 2E″←X 2E′ system have been recorded. The complex but completely resolved spectra could be analyzed using optical–optical double resonance techniques in combination with accurate ab initio calculations which provide potential energy surfaces and rovibronic term values for both electronic states. A detailed comparison between experimental and theoretical results for the (vs′=0, vb′=0, va′=0)←(vs″=0, vb″=0, va″=0) band demonstrates excellent agreement. The coupling between pseudorotation and rotational motion is shown to produce complex level patterns which, however, can be accurately represented by an effective pseudo/rotation Hamiltonian in terms of rotational and coupling constants that directly provide structural information. For both electronic states the nuclear dynamics is adequately described as a motion on a single adiabatic potential surface with a geometric phase π for closed loops around the conical intersection at D3h geometries. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308091
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of the thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si systems (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 745-749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si bilayered systems was investigated. In the Ni/Pt/(111)Si system, the NiSi films formed at 640 °C have an epitaxial relationship of (100)NiSi(parallel)(111)Si and [01¯0]NiSi(parallel)[011¯]Si with the substrates. On the other hand, those formed on (100)Si substrates were polycrystalline although the experimental parameters are the same as those in Ni/Pt/(111)Si samples. In both cases, NiSi and PtSi formed a solid solution Ni1−xPtxSi following Vegard's law. While the thermal stability of NiSi films is improved in both cases compared with the Ni/Si system, the thermal stability of the textured NiSi films formed on (111)Si substrates is higher than their polycrystalline counterparts formed on (100)Si substrates. This is attributed to the reduced interfacial energy and consequently increased activation energy for the nucleation of NiSi2 due to the formation of textured NiSi films on (111)Si substrates. At 900 °C, the Ni(Pt)Si film formed in Ni/Pt/(100)Si system decomposed into separate phases of NiSi and PtSi with noticeable lattice deformation. Differences between the texture evolution of NiSi films in Ni/Pt/Si and Ni(Pt) alloy/Si systems were also reported and explained from both kinetic and thermodynamic aspects. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379053
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  • 3
    Electronic Resource
    Electronic Resource
    Photoemission study of the effect of thermal annealing on Cs2O/Si(111) surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3787-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Cs2O overlayers with different thickness were prepared by simultaneous oxygen–cesium adsorption on Si(111) at room temperature. Photoelectron spectroscopy and work-function measurements have been used to study the Cs2O/Si surfaces as a function of annealing temperature. The results show that the interaction of the Cs2O overlayer with the substrate is weak. The Cs2O species is sensitive to x-ray radiation, forming a new species on the top surface. The Cs2O/Si surfaces exhibit a negative electron affinity with a work-function value of 0.85±0.1 eV until the Cs2O species decomposes completely. After Cs2O disappears, both Cs–O and Si–O bonds are dominant on the surfaces with a work function of about 1.2 eV. For further annealing, the oxygen bonded to cesium gradually transfers to Si due to Cs desorption. The thickness of the SiO2 overlayer formed after Cs desorption is dependent on the mount of oxygen in the Cs2O overlayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405133
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3827-3829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Good ferroelectric properties have previously been reported for both the (1−x)SrBi2Ti2O9–xBi3TiNbO9 bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta–O(4) or Ta–O(5) ions are the origin for the good ferroelectric properties of (1−x)SrBi2Ta2O9–xBi3TiNbO9 with x=0.3–0.4. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421642
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  • 5
    Electronic Resource
    Electronic Resource
    Improvement of the thermal stability of NiSi films by using a thin Pt interlayer (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2177-2179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a thin interlayer of Pt on the stability of NiSi films on Si(111) substrates has been investigated. Both x-ray diffraction (XRD) data and sheet resistance measurements show a remarkable improvement in the thermal stability of NiSi due to the Pt interlayer. Detailed study on the XRD data shows PtSi and NiSi form a solid solution following a Vegard's law. It was found in Ni/Pt/Si samples that a transition in NiSi texture from (200)NiSi||(111)Si to (002)NiSi||(111)Si took place before the nucleation of NiSi2, which may contribute to the enhanced stability of NiSi films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1313815
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  • 6
    Electronic Resource
    Electronic Resource
    Mark shapes in hybrid recording (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1835-1837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the theoretical and experimental investigation of mark shapes in thermally assisted or hybrid recording. The effect of alignment was studied by recording marks on perpendicular TbFeCo media using a commercial recording head and 840 nm laser. We found that mark shapes are primarily controlled through laser/head alignment, and that maximally straight transitions are obtained by placing the laser spot on the leading pole tip near the gap. Simulations of the recording process confirm the experimental findings and are used in conjunction with static write contours to show how transitions form. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454230
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  • 7
    Electronic Resource
    Electronic Resource
    Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 369-371 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process of polarization reversal in a SrBi2Ta2O9 (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100–600 ns) and the reversible polarization have been measured at different voltages in the range of 0–5 V. It was found that by annealing the SBT sample in AR atmosphere at 400 °C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125757
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  • 8
    Electronic Resource
    Electronic Resource
    Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 270-272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of film thickness on the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system has been studied. Three sets of Ni/Pt/Si(100) bilayered samples with the same Ni:Pt ratios but with different film thicknesses were annealed by rapid thermal annealing at 750–900 °C. Both the x-ray diffraction analysis and the sheet resistance measurement show that the thermal stability of Ni(Pt)Si films improves with a decrease in film thickness. This property of Ni(Pt)Si films reveals the good potential for its applications in ultrashallow junctions. The experimental results are explained in terms of classical nucleation theory. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1434311
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of salinity on food intake, growth, and survival of pufferfish (Fugu obscurus) (2004)
    Berlin, Germany : Blackwell Verlag GmbH
    Journal of applied ichthyology 20 (2004), S. 0 
    Details
    ISSN: 1439-0426
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The food intake, growth, food conversion ratio and survival of yearling pufferfish, Fugu obscurus Abe, were investigated under different water salinity conditions over a 54-day period. Within the salinity regimes of 0 (freshwater), 8, 18, and 35‰, the food intake levels were 0.97%, 1.43%, 1.19% and 1.01%, respectively; food conversion ratios were 1.31, 1.93, 1.61 and 1.36, respectively; and specific growth rates were 0.41%, 1.15%, 0.84%, and 0.35%, respectively. The three data series were reduced with increasing salinity. However, the survival rates did not show the same tendencies, which were 80%, 100%, 100%, and 67%, respectively. There were significant differences among the treatments. In conclusion, the yearling pufferfish optimum culture salinity condition was about 8‰.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1439-0426.2003.00512.x
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  • 10
    Electronic Resource
    Electronic Resource
    Molecular and genetic aspects of plant responses to osmotic stress (2002)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 25 (2002), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Drought, high salinity and freezing impose osmotic stress on plants. Plants respond to the stress in part by modulating gene expression, which eventually leads to the restoration of cellular homeostasis, detoxification of toxins and recovery of growth. The signal transduction pathways mediating these adaptations can be dissected by combining forward and reverse genetic approaches with molecular, biochemical and physiological studies. Arabidopsis is a useful genetic model system for this purpose and its relatives including the halophyte Thellungiella halophila, can serve as valuable complementary genetic model systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.2002.00782.x
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