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  • Digitale Medien  (87)
  • 1995-1999  (45)
  • 1990-1994  (41)
  • 1870-1879  (1)
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2435-2441 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Powdered samples of the type Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and Tb, are synthesized over the range 0≤x≤0.5 starting from nitrate solutions of the rare earths. X-ray diffraction and Raman scattering are used to analyze the samples. These compounds, at least in the low doping regime and for strictly trivalent dopants, form solid solutions that maintain the fluorite structure of CeO2 with a change in lattice constant that is approximately proportional to the dopant ionic radius. The single allowed Raman mode, which occurs at 465 cm−1 in pure CeO2, is observed to shift to lower frequency with increasing doping level for all the rare earths. However, after correcting for the Grüneisen shift from the lattice expansion, the frequency shift is actually positive for all the strictly trivalent ions. In addition, the Raman line broadens and becomes asymmetric with a low frequency tail, and a new broad feature appears in the spectrum at ∼570 cm−1. These changes in the Raman spectrum are attributed to O vacancies, which are introduced into the lattice whenever a trivalent RE is substituted for Ce4+. This conclusion is supported by a simple model calculation of the effects of O vacancies on the Raman spectrum. The model uses a Green's function technique with the vacancies treated as point defects with zero mass.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6601-6608 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Excimer laser ablation has been used to deposit epitaxial films of β-SiC on single-crystal Si wafers, in a vacuum, at substrate temperatures between 1050 and 1250 °C. Such films can be grown by ablating ceramic SiC, carbon, or alternating silicon and carbon targets at a range of growth rates. X-ray θ-2θ diffraction shows the presence of strong, sharp reflections from crystal planes parallel to the substrate, 200 and 400 for [100] substrates and 111 and 222 for [111] oriented substrates. Wrong reflections, such as 111 for [100] substrates, are extremely weak or absent, indicating alignment with the substrates. The characterization of these films by a number of techniques is discussed. In all cases the film-substrate interface shows a characteristic microstructure of cavities in the Si substrate, similar to that observed for the carbonization layer initially formed as a precursor for chemical-vapor deposition of SiC films on Si. This implies that the initial film growth, for all cases, involves chemical reaction of the Si substrate with the carbon in the plume as well as transport through the growing film. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4046-4054 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work fast-changing bias conditions in the nanosecond regime are applied to n-channel metal-oxide-semiconductor field effect transistors. Short bunches of holes are injected into the silicon dioxide (SiO2) and subjected to different field conditions which influence the final trapping. It is shown that by this experiment the kinetics of hole movement in the oxide can be studied. The model of polaron formation originating from work on high-energy irradiation is essentially confirmed. Evidence for a prepolaron formation phase is found, however, with a smaller scattering length for which we propose the different hole formation process in this experiment to be responsible. On this basis the interface trap formation by injected holes is investigated. It is found that not the number of trapped holes but the one of injected holes is decisive for interface trap formation.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7595-7601 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Homogeneous injection of holes into the gate oxide of metal-oxide-semiconductor (MOS) devices was obtained using p-channel MOS transistors under illumination conditions. Because gate hole currents could be measured the dependence of the hole trapping on the oxide electric field and on the energy of the holes at the injection point could be investigated. In contrast to results recently reported for electron injection no evidence for the generation of traps during hole injection was found. Only a small dependence of the capture cross section on the oxide field was observed. The study of the interface state generation during hole injection at various fields revealed that the amount of interface states directly generated by the injected holes is less than 5% of the number of trapped holes. For longer times a transformation process occurs and a correlation is found between the detrapping of holes and the generation of interface states.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2977-2982 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A simple laser reflective interferometer has been employed for in situ monitoring of diamond film growth in a hot-filament chemical vapor deposition reactor. This method uses a low power HeNe laser beam reflected at normal incident from the substrate. The high refractive index of the diamond film and the relatively high reflectivity of the Si substrate result in pronounced and easily detected interference oscillations in the reflected beam intensity. The oscillation period provides an accurate and immediate measure of the growth rate. In addition, the variations of the extrema of the oscillations provide an estimate of the quality and surface texture of the diamond films. Significant improvement in research productivity has been realized by using this technique.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1660-1660 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4515-4522 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Palladium oxide thin films are studied by ellipsometry, optical transmission, and Raman scattering. The PdO films are made by completely oxidizing Pd films sputtered onto fused silica substrates, and their optical constants determined using a combination of ellipsometry and transmission measurements. Oxidation kinetics experiments are performed on thick Pd substrates at temperatures of 300–500 °C. The optical properties of the films show a thickness dependence suggesting an increased absorption at the PdO-Pd interface. Ellipsometry on oriented single crystals of PdO yields the anisotropic optical constants at 632.8 nm. These results are combined with an effective medium theory to show that the oxidized films have a void density of 20–25%. Raman scattering is demonstrated to be a very sensitive probe for detecting the presence of PdO on Pd. An oxide only a few A(ring) thick is readily detectable, despite the absence of any surface enhanced Raman effect.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1596-1604 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin-film oxides of platinum have been prepared by reactive sputtering and characterized primarily by x-ray diffraction (XRD) and Raman scattering. Different phases of the Pt-O system were obtained by adjusting sputtering parameters such as gas composition, deposition rate, and substrate temperature. Optimum conditions for producing crystalline α-PtO2 and PtO were identified. Raman spectra of α-PtO2 films show two sharp lines at 514 and 560 cm−1, in agreement with those from commercially available powders. XRD and high-resolution scanning electron microscopy (HRSEM) analyses indicate that these samples have a poorly crystallized structure with lack of order along the c axis. The Raman spectra from PtO show two broad peaks at 438 and 657 cm−1, close to the lines seen in PdO, which has the same structure as PtO. Estimates from XRD line broadening and HRSEM photographs indicate mean crystallite sizes on the order of 300 A(ring). Infrared reflectivity spectra yield two of the three ir-active phonons, and along with scanning tunneling microscopy measurements suggest that PtO is a semiconductor. Thermoelectric measurements show that the predominant carriers are p-type, and ir reflectivity data indicate a carrier concentration of ∼4×1018 cm−3.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2820-2825 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Silicon-containing amorphous hydrogenated carbon films deposited by a plasma-enhanced chemical vapor deposition process were studied using both Raman and ellipsometry spectroscopies. Analyses of the experimental data from both these techniques yielded valuable information about the microstructure of the films. The silicon incorporation in amorphous hydrogenated carbon breaks down large size sp2 carbon clusters and enhances sp3 bonding. The reduction of large sp2 graphitic defects, the enhancement of sp3 bonding, and the associated microstructure changes are responsible for the desired properties of silicon-containing amorphous hydrogenated carbon. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 626-628 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Raman signature of the local Ge–C mode for substitutional C is identified as a narrow line (8 cm−1 full width at half maximum) near 530 cm−1 in alloy films of Ge1−yCy (0≤y≤0.07) grown on Ge (100) substrates by low-temperature (200 °C) molecular beam epitaxy. The intensity of the Ge–C line relative to the c-Ge line suggests that only a small fraction of the nominal C is in substitutional sites. In ternary alloys of Ge1−x−ySixCy with x=0.1 and 0.2 and y=0.03, the Ge–C mode disappears, suggesting a strong bias towards C bonding with Si as opposed to Ge. In Ge1−xSnx films the Ge–Sn mode is seen at 263 cm−1. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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