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  • 2005-2009  (3)
  • 1995-1999  (75)
  • 1910-1914  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Structural modification of ion-implanted and postannealed polycrystalline diamond studied by transmission electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1465-1468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented a convenient and effective method to ex situ study ion-implanted and postannealed polycrystalline diamond by transmission electron microscopy (TEM) without thinning the specimens. Chemical-vapor-deposited (CVD) diamond used for transmission electron microscopy study was directly deposited onto Mo TEM grids, and then implanted and postannealed. TEM images clearly reveal that there exists an ion-induced amorphous layer on the as-implanted CVD diamond surface, in which graphitelike structure is embedded. The amorphization processes depend on the irradiation conditions. Hydrogen plasma treatment was employed to anneal the as-implanted CVD diamond. High resolution electron microscopy images indicate that hydrogen plasma treatment can effectively remove the ion-induced surface amorphous layer without graphitizing the diamond. After treatment, high density ball-like diamond blisters appear on the surface, of which the average diameter is only about 2.5 nm, implying the critical size for the stable existence of CVD diamond crystallites may be on the order of a few atomic layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363014
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of BC2N thin films prepared by chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2880-2882 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of BC2N thin films have been investigated in terms of the temperature dependence of the resistivity and Hall effect measurements. The BC2N thin films were prepared by chemical vapor deposition from acetonitrile and boron trichloride on polycrystalline Ni and quartz substrates. The experimental results indicated that the BC2N films were p-type semiconductors on both substrates, with acceptor levels between 7.5 and 23 meV relative to the valence band. The hole mobility on Ni substrates was one order of magnitude higher than that on the quartz substrates, suggesting that the thin film quality is better on Ni substrates than on quartz substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360029
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of two-step-growth conditions for GaN on an AlN buffer layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 192-200 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride is grown by metalorganic vapor phase epitaxy with and without a low-temperature-grown AlN buffer layer. Variations in the surface morphology and the layer properties are compared between two-step growth and direct growth to study the effects of various growth conditions. It is found that (i) conditions that stabilize the GaN(0001) surface serve as guidelines for obtaining mirrored surfaces, and (ii) raising GaN growth temperature improves crystallographic, electrical, and luminescence properties of GaN. The observed improvement in the layer properties with increase in GaN growth temperature suggests that increasing N2 dissociation pressure does not affect GaN properties. GaN growth conditions are analyzed thermodynamically to show that NH3 in the growth ambients has the potential to suppress thermal dissociation of GaN. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359368
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  • 4
    Electronic Resource
    Electronic Resource
    Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6725-6728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aging tests were performed for InP-based laser diodes heteroepitaxially grown on Si substrates. To define the degradation mode, we studied the change in the device characteristics and electroluminescence (EL) images during the aging tests. The degradation proceeds in a mode characterized by a gradual increase in the threshold current without a change in the current–voltage characteristics. During the aging, dark spot defects (DSDs) appear in the EL images, where no defects were observed initially. However, after a certain number of DSDs are generated, no more degradation occurs in the current–light-output characteristics and EL images. The correlation of the saturation behavior between the threshold current and DSD number is quite good, and strongly suggests that the device degradation is dominated by the development of nonradiative defects in the active layer. Judging from the saturation density of DSDs, we can assume that the origin of the nonradiative defects is closely related to the dislocation that remains in the heteroepitaxial layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368999
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  • 5
    Electronic Resource
    Electronic Resource
    Deep levels and minority carrier lifetime in proton irradiated silicon pin diode (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4069-4074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels induced by MeV-proton irradiation in n−(ν) region of Si p-ν-n diodes were investigated by photocapacitance method under constant capacitance condition. Electrical property, dosage dependence, spatial distribution, and annealing behavior of the deep levels were studied. Carrier lifetime reduction in pin diodes by the deep level was examined by current–voltage characteristics and impedance measurements. From proton dosage dependence and annealing effect, the decreasing behavior of minority carrier lifetime with increasing deep level density was revealed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367226
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of negative dc bias voltage on structural transformation of carbon nitride at 600 °C (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 915-917 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride (CN) thin films were prepared at 600 °C by rf plasma pulsed laser deposition. As we increased the magnitude of the negative dc bias voltage, the CN bonds were transformed from a mixture of sp2 C–N and sp3 C–N states into a CN phase predominated by tetrahedral CN bonds. A biasing threshold of this transformation occurred due to the annihilation of the graphite microstructure, which coincided with a threshold of significant nitrogen incorporation. We found that suppression of graphite supersaturation appeared to be important for the formation of the tetrahedral sp3 C–N bonds. The nitrogen content of these films is stable upon annealing at 800 °C in vacuum. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122036
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  • 7
    Electronic Resource
    Electronic Resource
    Bonding characterization of BC2N thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2962-2964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the bonding states of BC2N thin films prepared by chemical vapor deposition, one of the new layered BCN compounds. The chemical bonding states of boron, carbon, and nitrogen atoms in the BC2N thin films were investigated by using x-ray photoelectron spectroscopy to measure chemical shifts of 1s electrons, being compared with those in graphite and hexagonal (h-) BN. The results exhibited that the thin films had significant B–C and C–N bonds and were clearly different from graphite and h-BN, indicating that an atomic-level hybrid of the three elements was synthesized. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116369
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  • 8
    Electronic Resource
    Electronic Resource
    Boron-doped carbon fullerenes and nanotubules formed through electron irradiation-induced solid-state phase transformation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2108-2110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Here we report on the in situ creation of single/multi-shelled fullerenes and multi-walled nanotubules by electron irradiation of chemical vapor deposit graphitic BxC1−x (x≤0.2) in a high-resolution 300 kV electron microscope. Nanostructure formation occurred through irradiation-induced solid-state phase transformation, in contrast to conventional fullerene/nanotube synthesis from the gas phase. The fullerene/nanotubule chemical composition and bonding character were analyzed by electron energy loss spectroscopy applying a &nullset;0.5 nm electron probe. The B/C ratio of the observed curled, closed nanostructures has never exceeded ∼0.1. Unlike pure carbon "onions," most of the B-doped fullerenes exhibited a polyhedral faceted circumference suggestive of B-induced buckling. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121291
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  • 9
    Electronic Resource
    Electronic Resource
    Fourth-harmonic generation of picosecond glass laser pulses with cesium lithium borate crystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3812-3814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fourth-harmonic generation of 1.5 ps, 1.053 μm glass laser pulses, where group velocity mismatch plays a significant role, at intensities up to 100 GW/cm2 using newly developed crystal, cesium lithium borate (CsLiB6O10). Type-I doubler and type-I quadrupler were used in the fourth harmonic generation experimental scheme. Energy conversion efficiencies of 24% and 53% have been achieved for frequency quadrupling and doubling of the fundamental glass laser pulses, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117113
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of boron doping on the crystal quality of chemical vapor deposited diamond films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as well as it improves crystallinity of the resulting films. A comparative study of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in cathodoluminescence (CL) is significantly intensified by boron incorporation. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that boron incorporation during CVD growth of diamond films can lead to better crystal quality. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116336
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