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  • 1
    Electronic Resource
    Electronic Resource
    On an implementation of standard bases and syzygies in SINGULAR (1996)
    Springer
    Applicable algebra in engineering, communication and computing 7 (1996), S. 235-249 
    Details
    ISSN: 1432-0622
    Keywords: Standard bases ; Syzygies ; Computer algebra system ; Highest corner ; EcartMethod
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics , Technology
    Notes: Abstract We describe an implementation of a general standard basis algorithm, valid for any monomial ordering compatible with the natural semigroup structure. We concentrate on new strategies which have proved useful, in particular in the non-wellordering case. Moreover, we describe the first implementation of Schreyer's method to compute syzygies and compare it with other, more classical methods. Comparisons of the computing time of several examples in the system SINGULAR give hints as to which strategies should be used in different classes of examples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01190332
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  • 2
    Electronic Resource
    Electronic Resource
    On an Implementation of Standard Bases and Syzygies in SINGULAR (1996)
    Springer
    Applicable algebra in engineering, communication and computing 7 (1996), S. 235-249 
    Details
    ISSN: 1432-0622
    Keywords: Key words Standard bases ; Syzygies ; Computer algebra system ; Highest corner ; EcartMethod.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics , Technology
    Notes: Abstract  We describe an implementation of a general standard basis algorithm, valid for any monomial ordering compatible with the natural semigroup structure. We concentrate on new strategies which have proved useful, in particular in the non-wellordering case. Moreover, we describe the first implementation of Schreyer’s method to compute syzygies and compare it with other, more classical methods. Comparisons of the computing time of several examples in the system SINGULAR give hints as to which strategies should be used in different classes of examples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01190332
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    CuAu-type ordering in epitaxial CuInS2 films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 785-787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordering of Cu and In atoms in near-stoichiometric CuInS2 epitaxial films grown on Si (111) by molecular beam epitaxy was studied by transmission electron microscopy. Nonchalcopyrite ordering of the metal atoms in CuInS2 is observed, which is identified as CuAu-type ordering. Sharp spots in electron diffraction patterns reveal the ordered Cu and In atom planes alternating along the [001] direction over a long range. High-resolution electron microscopy confirms this ordering. The CuAu-ordered structure coexists with the chalcopyrite ordered structure, in agreement with theoretical prediction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122001
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  • 4
    Electronic Resource
    Electronic Resource
    A two magnetron sputter deposition chamber for in situ observation of thin film growth by synchrotron radiation scattering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3344-3348 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a sputter deposition chamber for the in situ study of film growth by synchrotron x-ray diffraction and reflectivity is reported. Four x-ray windows, sealed with low cost, nonhazardous Kapton, enable scattering both in the horizontal as well as in the vertical scattering planes. The chamber fits into a standard six-circle goniometer from Huber which is relatively widespread in synchrotron laboratories. Two miniature magnetron and additional gas inlets allow for the deposition of compound films or multilayers. Substrate heating up to 650 °C and different substrate bias voltage are possible. The performance of the chamber was tested with the deposition of high quality TiN films of different thicknesses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384432
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of electron trap states due to InAs quantum dots in GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2916-2918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots grown in a GaAs matrix are investigated using capacitive transient spectroscopy and transmission electron microscopy (TEM). Two deep levels are detected which are energetically too deep to be the intrinsic electron levels of the quantum dots. Both TEM as well as the detailed non-exponential behavior of the electron capture indicate that the traps do not result from dislocations in the GaAs matrix. We propose that the measured trap levels are due to point defects in or near the quantum dots. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126516
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  • 6
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy investigation of structural properties of self-assembled CdSe/ZnSe quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1329-1331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdSe quantum dots on ZnSe, grown by molecular beam epitaxy and formed during reorganization of an initially uniform film by thermal activation, are microstructurally elucidated in cross section and plan view, using transmission electron microscopy. In diffraction contrast, an almost uniform wetting layer is clearly visible. Dark contrast features with a distinctly larger extension into growth direction mark the location of quantum dots. Individual quantum dots can be identified in high-resolution imaging both by lattice expansion and contrasts arising from their strain fields. Plan-view images show the coexistence of two classes of quantum dots with an average lateral size of ≤10 nm (area density 100 μm−2) and 10–50 nm (20 μm−2), respectively. The shape of the larger entities is pyramidlike. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120984
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  • 7
    Electronic Resource
    Electronic Resource
    ROBL – a CRG beamline for radiochemistry and materials research at the ESRF (1999)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 6 (1999), S. 1076-1085 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The paper describes the Rossendorf beamline (ROBL) built by the Forschungszentrum Rossendorf at the ESRF. ROBL comprises two different and independently operating experimental stations: a radiochemistry laboratory for X-ray absorption spectroscopy of non-sealed radioactive samples and a general purpose materials research station for X-ray diffraction and reflectometry mainly of thin films and interfaces modified by ion beam techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049599010663
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  • 8
    Electronic Resource
    Electronic Resource
    High-resolution analytical transmission electron microscopy of semiconductor quantum structures (1999)
    Springer
    Fresenius' journal of analytical chemistry 365 (1999), S. 217-220 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Analytical transmission electron microscopy was applied to characterize the size, shape, real structure, and, in particular, the composition of different semiconductor quantum structures. Its potential applicability is demonstrated for heterostructures of III-V semiconducting materials and II-VI ones, viz. (In,Ga)As quantum wires on InP and (In,Ga)As quantum dots on GaAs both grown by metal organic chemical vapor deposition, and CdSe quantum dots on ZnSe grown by molecular beam epitaxy. The investigations carried out show that the element distribution even of some atomic layers can be detected by energy-dispersive X-ray spectroscopy, however, exhibiting a smeared profile. Contrary to that, sub-nanometre resolution has been achieved by using energy-filtered transmission electron microscopy to image quantum dot structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160051476
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  • 9
    Electronic Resource
    Electronic Resource
    Mutation of p53 with loss of heterozygosity in the osteosarcomatous component of a dedifferentiated chondrosarcoma (2000)
    Springer
    Virchows Archiv 436 (2000), S. 494-497 
    Details
    ISSN: 1432-2307
    Keywords: Key words Dedifferentiated chondrosarcoma ; p53 mutation ; p53 LOH
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract  We investigated a dedifferentiated chondrosarcoma of a 61-year-old woman with an osteosarcomatous high-grade component for p53 alteration. The low-grade cartilaginous and the high-grade osteosarcomatous components of the tumor were macrodissected and evaluated separately by immunohistochemistry and molecular biology. We used PCR-SSCP analysis and direct sequencing to screen exons 4–8 for p53 mutations. The p53 intron 1-polymorphism was investigated for loss of heterozygosity. A functionally relevant p53 missense mutation in codon 193 of exon 6 (A-to-T transversion) with loss of wild-type allele was detected only in the dedifferentiated component. Using the monoclonal antibody DO-1, immunohistochemistry failed to show p53 overexpression. This evidence of p53 mutation may be regarded as at least a co-factor that ”switched” the preexisting low-grade conventional chondrosarcoma to a highly malignant dedifferentiated tumor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004280050478
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  • 10
    Electronic Resource
    Electronic Resource
    Experimental results on muon-catalyzed dt fusion (1996)
    Springer
    Hyperfine interactions 101-102 (1996), S. 67-80 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A comprehensive experimental study of the kinetics of muon-catalyzed dt fusion has been conducted at PSI, based on the measurement of the 14 MeV neutrons from the fusion process. The target conditions included densities from 1–150% of the atomic density of liquid hydrogen, relative tritium concentrations of 2–95%, and temperatures of 13–300 K. Information about the dt cycle has been obtained from the measured neutron time distributions by different methods: Monte Carlo simulations primarily aimed at investigating epithermal effects in molecular formation and the determination and interpretation of cycling rates describing the steady state regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02227607
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