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  • 1995-1999  (2)
  • 1955-1959  (3)
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  • 1
    Digitale Medien
    Digitale Medien
    Radio-Frequency Radiation from the Rosette Nebula (1955)
    [s.l.] : Nature Publishing Group
    Nature 176 (1955), S. 221-222 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] The antenna of the Ohio State telescope has a half-power beam width of 1-3 in right ascension and of 8 in declination. The right ascension of a source is determined by the time at which the maximum intensity is received, while the declination is determined by comparing records taken at several ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/176221b0
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    A Detailed Radio Map of the Sky (1955)
    [s.l.] : Nature Publishing Group
    Nature 175 (1955), S. 159-161 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] FROM observations during the spring of 1954 with the Ohio State University radio telescope, a detailed radio map of the sky has been made. This map (Fig. 1) has sufficient detail to suggest how the sky would appear if our eyes were sensitive to radio waves instead of light. The central region of ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/175159b0
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    A Fluctuating Celestial Radio Source at 242 Megacycles per Second (1955)
    [s.l.] : Nature Publishing Group
    Nature 176 (1955), S. 304-305 
    Details
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] Since the phenomenon may be caused by either scintillations (of ionospheric or tropospheric origin) or by true variations in intensity of the source, or both, the term 'fluctuation' will be used to describe the effect, whatever its cause. The first fluctuation record of the object was obtained on ...
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1038/176304a0
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
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  • 4
    Digitale Medien
    Digitale Medien
    A new structure of 780 nm AlGaAs/GaAs high power laser diode with non-absorbing mirrors (1999)
    Springer
    Applied physics 68 (1999), S. 467-470 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 78.20.Wc; 78.45.+h; 78.40.Fy
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050925
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy (1999)
    Springer
    Applied physics 68 (1999), S. 627-629 
    Details
    ISSN: 1432-0630
    Schlagwort(e): PACS: 61.72.-y; 68.55.-a; 68.55.Jk; 68.55.Jk
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract. The effect of the surface preparation of the GaAs(110) substrate on the ZnSe epitaxial layer grown by molecular beam epitaxy (MBE) was investigated by means of etch-pit density (EPD) measurements, surface morphology observation, and reflection high-energy electron diffraction (RHEED) analysis. The ZnSe epitaxial layer grown on a GaAs(110) surface prepared by cleaving the (001)-oriented wafer in ultrahigh vacuum (UHV) showed about 5×104 cm-2 of EPD. This value is much lower than that observed from both the samples grown on the mechanically polished surface with and without a GaAs buffer layer. Due to the non-stoichiometric surface after thermal evaporation of the surface oxide, three-dimensional growth can easily occur on the mechanically polished GaAs(110) substrate. These results suggest that the stoichiometric and atomically flat substrate surface is essential for the growth of low-defect ZnSe epitaxial layers on the GaAs(110) non-polar surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/s003390050951
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