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  • 1
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5910-5915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface layer of crystalline silicon implanted with 1.5 MeV Si ions with doses ranging from 1×1011 to 1×1015 Si+/cm2 has been studied by Raman scattering. Raman line intensities, shapes and shifts have been used to investigate the defects in the near-surface layer. Above doses of 1×1013 Si+/cm2, Raman provides evidence for the presence of amorphous silicon islands within the crystalline structure. The phonon-confinement model (PCM) which is based on the breakdown in wavevector selection rules due to scattering from finite domain sizes has been used to estimate the effective average distance between defects. The PCM has also been modified by introducing a term attributable to residual stress in the near-surface layer. By fitting experimental Raman spectra with the modified PCM, the Raman line shifts due to stress effects are decoupled from those due to phonon confinement. The mechanisms for the stress creation are also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3228-3237 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect structures were investigated by transmission electron microscopy for GaN/Al2O3 (0001) epilayers grown by metal-organic chemical vapor deposition using a two-step process. The defect structures, including threading dislocations, partial dislocation bounding stacking faults, and inversion domains, were analyzed by diffraction contrast, high-resolution imaging, and convergent beam diffraction. GaN film growth was initiated at 600 °C with a nominal 20 nm nucleation layer. This was followed by high-temperature growth at 1080 °C. The near-interfacial region of the films consists of a mixture of cubic and hexagonal GaN, which is characterized by a high density of stacking faults bounded by Shockley and Frank partial dislocations. The near-interfacial region shows a high density of inversion domains. Above ∼0.5 μm thickness, the film consists of isolated threading dislocations of either pure edge, mixed, or pure screw character with a total density of ∼7×108 cm−2. The threading dislocation reduction in these films is associated with cubic to hexagonal transformation of the nucleation layer region during high temperature growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 49-51 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of the dots. We attribute the changes to a combination of factors such as preferential growth of the overlayer above the wetting layers because of the strained surfaces and to the thermal instability of the InAs dots at elevated temperature. The result suggests that controlled sublimation, through suitable manipulation of the overlayer growth conditions, can be an effective tool to improve the structure of the self-organized quantum dots and can help tailor their physical properties to any specific requirements of the device applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2468-2470 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the transport properties of two-dimensional electron gases formed in GaAs/AlGaAs heterostructures in which InAs self-assembled quantum dots have been inserted in the center of a GaAs quantum well. We observed that, while maintaining a constant carrier density, the mobility increased as the InAs dot density was reduced. The ratio of the transport to the quantum lifetime was measured to be approximately five with the dominant scattering mechanism attributed to short-range scattering from the inserted InAs dots. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 28 (1936), S. 650-652 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of public health dentistry 55 (1995), S. 0 
    ISSN: 1752-7325
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: This paper reviews recent changes in the epidemiology of dental caries and assesses their potential impact on the diagnosis and management of the disease and the planning and operation of sealant programs. These changes, such as the decline in caries and slowing of the rate of progression of the disease, have important implications for diagnosing and treating incipient lesions, predicting caries risk, and conducting effective disease preventive programs. Traditional paradigms for restoring carious lesions are being replaced by newer strategies that emphasize disease prevention and conservation of tooth structure. The search continues for the identification of practical models for predicting caries risk at the individual level. This paper describes a method useful for targeting resources in sealant placement programs by enabling one to determine the relative effectiveness of sealing alternative tooth surfaces in the oral cavity. One guide serves as a widely adopted manual for those who use or intend to use dental sealants in caries prevention programs. This paper provides a brief review of that document, “Preventing Pit and Fissure Caries: A Guide to Sealant Use,” as well as guidelines for sealant utilization provided by the American Dental Association, and information regarding dental sealant programs under Medicaid. The final portion of the paper provides a synthesis of the epidemiology reviewed and summarizes the implications of findings for sealant programs.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of public health dentistry 57 (1997), S. 0 
    ISSN: 1752-7325
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objectives: Millions of restorative procedures are performed annually in the United States, yet very little is known about their distribution in the general population. With increasing concern about potential adverse health effects of some restorative materials, a better understanding of the extent of exposure to these materials in the population is important. The purpose of this study is to report the prevalence, patterns, and distribution of dental restorative materials in a population of male veterans. Methods: This collaborative study with the US Air Force examined 1,166 male veterans to assess exposure to dental amalgam and other restorative materials. An inventory of dental materials in the study population was obtained through oral examinations. Dental materials were classified into five categories: (1) amalgam; (2) resin; (3) porcelain, cement, or temporary, including ionomer (PCT); (4) cast gold alloys/direct filling gold; and (5) other metals (OM). The mean age of the study participants was 52.9 years. Over 94 percent of the study participants were dentate. Results: The study participants averaged 45.8 restored/replaced surfaces. Restored/replaced surfaces increased with age while the number of teeth decreased with age. The most frequently used restorative material was amalgam, averaging 19.89 surfaces per subject, followed by PCT (9.38), resins (8.99), OM (5.52), and gold (4.91). The distributions of restorative materials varied by age, arch type, and location in the mouth. Conclusion: The study population experienced substantial exposure to dental materials.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of clinical periodontology 25 (1998), S. 0 
    ISSN: 1600-051X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract. This study was undertaken to test the hypothesis that gingival inflammation and dental calculus are important determinants of the development and progression of early-onset periodontitis. The study sample included 156 individuals who were 13–20 years old at baseline and who were examined 2× during 6 years to assess the attachment loss, gingival state and the presence of dental calculus. 33 (21%), 62 (40%), and 61 (39%) individuals were classified as having localized, generalized, or incidental EOP, respectively. The results showed an increase in the % of teeth with overt gingivitis and subgingival calculus, and also an increase in the % of teeth showing attachment loss during the 6-year period in ail classification groups. Of teeth with 0–2 mm attachment loss at the beginning of the study and which developed ≥3 mm attachment loss during the following 6 years, there were 2× as many teeth with overt gingival inflammation, and 4× more teeth with subgingival calculus at baseline than teeth without. Gingivitis and subgingival calculus when present at both examinations resulted in a stronger association with the development of new lesions than presence of these variables at baseline. Teeth with gingivitis at baseline had a significantly higher mean attachment loss during 6 years than teeth without gingivitis (p〈0.0001), and teeth with subgingival calculus at baseline had a significantly higher mean attachment loss than teeth without subgingival calculus (p〈0.0001), The presence of gingivitis and subgingival calculus at baseline and 6 years later was associated with the occurrence of even higher disease progression during this period. The association between gingival inflammation and subgingival calculus and the development and progression of attachment loss during the study period in the generalized and the localized EOP groups was significantly higher than the association in the incidental EOP group. In an appreciable % of the sites in all 3 groups, however, the presence of the 2 factors was not associated with attachment loss during 6 years. The results suggest a significant association between gingival inflammation and subgingival calculus and the development and progression of early-onset periodontitis.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 2474-2479 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photochemistry of carbonyl sulfide (OCS) adsorbed to small silver clusters is shown to exhibit a striking odd–even dependence on the number of Ag atoms in the cluster. OCS is found to desorb nondissociatively from even numbered silver clusters. In contrast, on odd silver clusters, a new product channel corresponding to AgnS is observed. Parallels are found with the photochemistry of adsorbates on extended surfaces. Cross-section measurements for OCS desorption from Ag10 and wavelength-dependent measurements of OCS dissociation on Ag9 both indicate that electronic excitation of the cluster initiates chemistry, analogous to substrate mediated surface photochemistry. The size dependence is reasonably explained in terms of a charge-transfer mechanism involving an ion-pair state of the AgnOCS complex. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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