ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A P-n-p AlGaAs/InGaAs/GaAs collector-up heterojunction bipolar transistor (C-up HBT), grown by three-stage molecular beam epitaxy, has been fabricated, and its dc and high-frequency performances have been evaluated. The use of a graded InxGa1−xAs (x=0.0–0.09) is shown to improve the common-emitter current gain (β) and to greatly reduce the base transit time (τb) for the P-n-p C-up HBTs. A maximum current gain (β) of 150 was measured for a 16×17 μm2 device. From S-parameter measurements, a best unity-gain cutoff frequency fT=43 GHz at a collector current of −10 mA was achieved using a 5×10 μm2 collector area. The results show that the P-n-p C-up HBTs may be useful for future planar integrated circuit applications. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115521
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