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  • 1
    Electronic Resource
    Electronic Resource
    Room temperature manipulation of the heterofullerene C59N on Si(100)-2×1 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1074-1076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absorption of the heterofullerene C59N on the Si(100)-2×1 surface has been investigated using scanning tunneling microscopy (STM) under ultrahigh vacuum conditions. The molecules are adsorbed in monomer form in the troughs between silicon dimer rows. It is possible to use the tip of the STM to manipulate the molecules parallel and perpendicular to the dimer rows in a controlled fashion at room temperature. To determine the stability of the C59N monomer we have examined the response of pairs of molecules to STM manipulation and found that the Si(100)-2×1 surface inhibits conversion to (C59N)2 dimers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124601
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  • 2
    Electronic Resource
    Electronic Resource
    Molecular scale alignment strategies: An investigation of Ag adsorption on patterned fullerene layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2937-2939 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a procedure for atomic scale alignment with respect to macroscopic objects. Metallic and etched registration marks on clean reconstructed Si surfaces are used to guide the tip of a scanning tunnelling microscope. The metallic marks are formed from Ta and can withstand thermal cycling up to 1500 K. These procedures have been used to investigate the interaction of Ag with a patterned fullerene multilayer deposited on Si(111)-7×7. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120221
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  • 3
    Electronic Resource
    Electronic Resource
    Measurement and manipulation of Mn clusters on clean and fullerene terminated Si(111)-7×7 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2114-2116 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the properties of Mn clusters deposited on clean semiconductor surfaces using an ultrahigh vacuum scanning tunnelling microscope. The clusters were formed using a gas aggregation source and were deposited on Si(111)-7×7 and Si(111)-7×7 terminated by a C60 monolayer. A distribution of cluster widths was observed with a most frequent value of 2.6 nm. There was no evidence of either cluster coalescence or preferential bonding sites. The clusters had an irregular shape, but did not appear to be grossly deformed upon adsorption onto the surface. The clusters could be selectively removed from the C60 terminated surface during scanning at negative sample bias. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118965
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  • 4
    Electronic Resource
    Electronic Resource
    Manipulation of C60 molecules on a Si surface (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1075-1077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the tip of a scanning tunneling microscope to position individual C60 molecules on a Si(111) surface. It is possible to form simple patterns of molecules at room temperature using this technique. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114469
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  • 5
    Electronic Resource
    Electronic Resource
    Passivation of Si(111)-7×7 by a C60 monolayer (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 506-508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: C60 monolayers are formed on a Si(111)-7×7 surface under ultrahigh vacuum (UHV) conditions. The effects of exposure to atmosphere (for 30 min) and water (for 30 s) are assessed by comparing images of the surface acquired using an UHV scanning tunneling microscope. Following exposure and/or immersion we are able to resolve the C60 molecules exhibiting hexagonal order in an arrangement which is essentially identical to that formed prior to withdrawal from the UHV system. Our results clearly show that deposition of one monolayer of C60 on a Si surface can inhibit chemical attack by water and atmospheric oxygen. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117768
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Atomic scale modifications of GaAs using a scanning tunneling microscope'' [Appl. Phys. Lett. 66, 1515 (1995)] (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3527-3527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114228
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic scale modifications of GaAs using a scanning tunneling microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1515-1517 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have created atomic scale modifications on the GaAs(111)B surface by applying voltage pulses between the tip of a scanning tunneling microscope and a GaAs sample under ultrahigh vacuum conditions. A voltage pulse of 5 V (sample negative) for 25 ms results in the creation of a disordered region (approximately, 3 nm×3 nm in area) of As trimers. In addition, surface stacking faults are formed which extend over distances of order 10 nm and terminate on surface defects. A pulse with the same parameters, but opposite polarity, creates a nanometer scale crater. We argue that the smallest features are formed by electric field induced diffusion (for negative bias pulses) or field desorption (positive bias pulses). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113631
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  • 8
    Electronic Resource
    Electronic Resource
    Cretion and annihilation of negatively charged excitons in GaAs quantum wells (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1395-1400 
    Details
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Tunneling ; Other semiconductor-to-semiconductor contacts,p-n junctions, and heterojunctions ; Electroluminescence ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary The electroluminescence of p-i-n GaAs double-barrier resonant tunnelling diodes has been investigated for various concentrations of free carriers (either holes or electrons) in the quantum well (QW). For these structures it is possible to change the relative electron or hole density quasi-continuously with applied bias-voltage. New low-temperature excitonic recombinations are identified in the electroluminescence spectra. Continuous variation of the carrier density in the quantum well from a hole-rich into an electron-rich environment leads to the observation of positively charged excitons (X 2 +), neutral excitons (X), negatively charged excitons (X −) and finally an unbound electron-hole recombination. An increased temperature causes the dissociation of the charged excitons in favour of the neutral heavy-hole free excitonX. In high magnetic fields the unbound electron-hole recombination is transferred into an excitonic recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457216
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