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  • 1995-1999  (8)
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Erscheinungszeitraum
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2343-2348 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The lattice heating rate has been calculated for GaAs field-effect transistors of different source-drain channel design by means of the ensemble Monte Carlo particle model. Transport of carriers in the substrate and the presence of free surface charges are also included in our simulation. The actual heat generation was obtained by accounting for the energy exchanged with the lattice of the semiconductor during phonon scattering. It was found that the maximum heating rate takes place below the surface near the drain end of the gate. The results correlate well with a previous hydrodynamic energy transport estimate of the electronic energy density, but shifted slightly more towards the drain. These results further emphasize the adverse effects of hot electrons on the Ohmic contacts. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6046-6048 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The essential role played by the physics of Zener tunneling of electrons from the barrier to the drain in finding the solutions to the field, energy-balance, and quantum transport equations in AlGaSb/InAs/AlGaSb double-barrier structures is pointed out. It is shown that the self-consistent physical consideration on these equations is crucial in obtaining interesting and realistic novel hysteresis phenomena of the trapped hole charge in an AlGaSb barrier. There exist solutions to the above equations which do not incorporate the physics of Zener tunneling, which are therefore physically untenable.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1515-1525 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electronic sources based upon resonant tunneling diodes (RTDs) usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy-storage mechanisms solely within the RTD and characterizes the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear "access'' resistance and quantum-well inductance is responsible for the hysteresis, "plateaulike'' behavior, and bistability associated with the intrinsic current–voltage (I–V) characteristic. Furthermore, a new circuit-level representation which accurately incorporates the nonlinear dependencies into these heretofore "linear'' equivalent-circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I–V characteristics of the RTD.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5215-5231 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed dynamical analysis of an all solid-state THz source is given. This is based on the polarization-induced autonomous oscillation in resonant tunneling heterostructure with staggered band-gap alignment. The physical model consists of the following processes: (a) Generation by Zener tunneling of holes trapped in the barrier and electrons drifting in the depletion layer of the drain, whose rate decreases with the polarization between the barrier and quantum well. (b) Stimulated generation of barrier-well polarization. (c) Nonradiative decay of barrier-well polarization through barrier-hole recombination and quantum-well electron discharge. It is shown that a limit cycle oscillation of the barrier-well polarization and trapped-hole charge in the barrier can occur which induce THz oscillations in the resonant tunneling current across the device. The time-averaged results agree with the measured current–voltage characteristic of AlGaSb/InAs/AlGaSb staggered band-gap double-barrier structure. In particular, the measured smaller current offset at forward bias compared to that of reverse bias in the current–voltage hysteresis loop is predicted by our physical model and limit cycle analysis. Thus, we have experimental evidence indicating the correctness of our approach and the promising potential of this device as a novel all solid-state THz source. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1133-1139 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The design criteria for large transconductance/high output impedance or high-gain operation of metal-oxide tunneling transistors is given. The dependence of the gate control on the aspect ratio of thickness to width of the tunneling oxide is investigated by computer simulation. This device structure can only operate similar to conventional semiconductor transistors for aspect ratio considerably less than one. It ceases to function as a transistor for larger aspect ratio due to insufficient penetration of the gate control field into the tunneling oxide. To demonstrate this, the current–voltage characteristics are computed for aspect ratios equal to 7/30, 1, 21/10, and the different tunneling-current behaviors compared with our experimental results on Ti/TiOx/Ti and Nb/NbOx/Nb tunnel transistors.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3071-3073 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated a nanometer-scale transistor that operates by using a gate field to modulate the transmission of electrons through a lateral metal/oxide tunnel barrier. Our initial devices have a 30-nm-wide lateral Nb/NbOx tunnel junction on top of a planar Al2O3/Al buried gate. We observe effective modulation of the source–drain current with gate bias at room temperature with negligible gate leakage current. We identify the materials issues that currently limit the device performance, and we offer direction for future device improvements.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5021-5031 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The current–voltage (I–V) characteristics in the ballistic limit of metal-oxide tunnel transistors are calculated as a function of temperature, potential barrier height, gate insulator thickness, aspect ratio, and oxide-channel shape. The saturation (‘knee') point and three modes of current transport across the device are discussed. For a given aspect ratio, the output impedance improves with increase in tunnel-oxide width, accompanied by slight decrease of gate transconductance. The net result is a significant improvement in the transistor gain. The gate transconductance improves with decrease in gate-insulator thickness, while approximately maintaining the output impedance. The net result is also a significant improvement in the transistor gain. Thus for a given aspect ratio, further device optimization to increase the transistor gain can be carried out by either increasing the tunnel oxide width or decreasing the gate insulator thickness. In practice, one preferably does both. A numerical study of the device performance of tapered-oxide devices is undertaken. We find that uniform-oxide channel design is generally superior to tapered-oxide channel designs. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    ISSN: 0020-7608
    Schlagwort(e): Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Notizen: A brief description of an extension of the time-dependent functional theory to coupled field systems such as electron-ion and electron-electromagnetic fields is given. This theory is further generalized to situations where the system is initially in thermodynamic equilibrium and is subjected to external time-dependent probes which may drive the system out of equilibrium. Such a generalization is based on the Liouvillean quantum field dynamics (LQFD). The above formalism provides a firm physical and mathematical basis for time-dependent simulation procedures such as those based on the Car-Parrinello approach by replacing the fictitious Lagrangian by a precise action principle. Several physical examples are given to illustrate the need for this formalism, where there is a necessity for treating all the field variables on equal footing and in a self-consistent way. A new alternate formalism of time-dependent functional theory based on a novel application of the Baym Φ-derivable method is also given in terms of LQFD. By choosing suitable processes to set up the (D-functional, our functional theory is transformed into a practical self-consistent approach to the quantum many-body equilibrium and transport problems, with built-in conservation laws for all the physically relevant variables). © 1995 John Wiley & Sons, Inc.
    Zusätzliches Material: 2 Tab.
    Materialart: Digitale Medien
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