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  • 1995-1999  (16)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4072-4077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform and autocorrelation function analysis. For samples with nominal atomic ratios Mo:Si=1:2 and 3:1, well defined multilayered Mo/Si structures were obtained after annealing at 250 °C for 30 min. On the other hand, distinct multilayered MoSi2/Si structure was formed only for Mo:Si=1:2 samples after annealing at 650 °C for 1 h. Multiphases were observed to simultaneously form in samples annealed at 400–500 °C. After 600 °C annealing for 1 h, tetragonal MoSi2 was the only silicide phase observed for the Mo:Si=1:2 samples, whereas both tetragonal and hexagonal MoSi2 were present in Mo:Si-3:1 samples. The stability of the multilayered Mo/Si structures was found to depend critically on the atomic ratios of constituent elements, bilayer period, and annealing conditions. The results are interpreted in terms of the delicate balance among intermixing of constituent atoms, silicide formation, and crystallization of silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361835
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of amorphous interlayers by solid-state diffusion in Ti thin films on epitaxial Si–Ge layers on silicon and germanium (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6539-6542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of amorphous interlayers (a-interlayers) by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline Ti thin film on germanium and epitaxial Si1−xGex (x=0.3, 0.4, and 0.7) alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy. Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as-deposited samples. The growth of the a-interlayers was found to vary nonmonotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with those of the Ti/Si system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360474
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  • 3
    Electronic Resource
    Electronic Resource
    Growth kinetics of amorphous interlayers by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline V thin films on (001)Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4425-4430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of an amorphous interlayer (a-interlayer) formed by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline V thin films on (001)Si have been investigated by conventional and high-resolution transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 430–465 °C. The growth then slows down and deviates from a linear growth law as a critical thickness of the a-interlayer is reached. The activation energy of the linear growth and maximum thickness of the a-interlayer were measured to be 1.1±0.3 eV and 4.5 nm, respectively. The correlations among differences in atomic size and electronegativity between metal and Si atoms and activation energy of the linear growth, critical and maximum a-interlayer thickness, the calculated free-energy difference in forming the amorphous phase, as well as atomic mobility in Ti/Si, Zr/Si, Hf/Si, Ta/Si, Nb/Si, and V/Si systems are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359470
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of crystallinity and thickness of silicide layer and substrate orientation on the oxidation of NiSi2 on silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 929-936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation kinetics for both dry and wet oxidation of epitaxial NiSi2 (200 nm)/(001)Si samples as well as dry oxidation of polycrystalline NiSi2 (200 nm)/(111)Si and epitaxial NiSi2 (600 nm)/(111)Si samples have been studied by transmission electron microscopy. Comparing oxidation kinetics data of 200-nm-thick epitaxial NiSi2 on (001) and (111)Si, activation energies of the parabolic rate constants are rather close, whereas those for linear rate constants are substantially different. The orientation dependence of the linear activation energies is explained in terms of the total number of available Si atoms for oxidation as a function of the substrate orientation. Oxide growth rate was found to be higher in polycrystalline NiSi2/(111)Si samples than that in epitaxial NiSi2/(111)Si samples. Strong influence of the grain boundaries of NiSi2 on oxidation kinetics was observed with the grain boundaries serving as fast paths for oxidation. For dry oxidation of epitaxial NiSi2 (600 nm)/(111)Si samples, both parabolic and linear activation energies are higher than those of Ni(200 nm)/(111)Si samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360285
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  • 5
    Electronic Resource
    Electronic Resource
    Morphological evolution of the low-temperature oxidation of silicon with a gold overlayer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 919-925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature oxidation of silicon with a gold overlayer has been studied by in situ reflected high-energy electron diffraction, Auger electron spectroscopy, and transmission electron microscopy. In nonultrahigh vacuum (non-UHV) deposited (001) samples, wet oxidation was found to proceed more rapidly than that of UHV deposited (001) samples. In samples annealed at 220 °C, an oxide layer was found to rapidly develop between a two-layer structure of Au films. Au globules were observed to disperse in the oxide layer after an extended period of oxidation. The difference in the oxidation behavior between UHV and non-UHV samples is attributed to the absence and presence of empty channels between the Au grains. In UHV deposited (111) samples wet oxidized at 220–250 °C for various periods of time, the oxide was found to grow initially on top of the Au layer. Both the thickness of the oxide layer and the unevenness of the Au layer were found to increase with annealing time. The presence of highly textured Au/Si interface in (111) samples led to the retardation of oxidation process. The morphological evolution observed in the present study is used to explain the dependence of maximum oxide thickness on starting Au layer as well as the termination of oxide growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360283
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  • 6
    Electronic Resource
    Electronic Resource
    Simultaneous occurrence of multiphases in the interfacial reactions of ultrahigh-vacuum-deposited V and Zr thin films on (111)Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9123-9128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh-vacuum (UHV) -deposited V and Zr thin films on (111) Si by high-resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the V/Si system, an amorphous interlayer (a-interlayer), V3Si and V5Si3, were found to form simultaneously in samples annealed at 500 °C for 60 min. For the Zr/Si system, an a-interlayer, Zr5Si3 as well as FeB and CrB types of ZrSi, were observed to form in samples annealed at 440 °C for 40 min. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV-deposited refractory metal and rare-earth–metal thin films on silicon. The observation of the prevalence of the formation of multiphases in the initial stages of thin film reactions called for a reexamination of generally accepted "difference'' in reaction sequence between bulk and thin-film couples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362648
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of composition on the formation temperatures and electrical resistivities of C54 titanium germanosilicide in Ti–Si1−xGex systems (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1340-1345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of alloy composition on the formation temperature and electrical resistivities of C54 titanium germanosilicide formed during the Ti/Si1−xGex (x=0, 0.3, 0.4, 0.7, 1) solid state reaction have been investigated. Ti5(Si1−yGey)3, C49– and C54–Ti(Si1−zGez)2 were observed to form in the Ti/Si1−xGex (x≥0.4) systems. On the other hand, Ti6(Si1−yGey)5 and C54–Ti(Si1−zGez)2 were found in the Ti/Si1−xGex (x[greater, double equals]0.7) systems. For both cases, the relationship of x〉y〉z was found. The appearance and agglomeration temperature of low-resistivity C54–Ti(Si1−zGez)2 were both found to decrease with the Ge concentration. The resistivities of C54–Ti(Si1−zGez)2 were measured to be 15–20 μΩ/cm. The segregation of Si1−wGew (w〉x) was found in all samples annealed above 800 °C. The effects of thermodynamic driving force, kinetic factor, and composition of the micro-area are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370892
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  • 8
    Electronic Resource
    Electronic Resource
    The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3630-3635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of pinhole-free epitaxial DySi2−x films on atomically clean Si(111) has been achieved by depositing a 2-nm-thick Dy layer onto Si(111) with a 1.5-nm-thick capping amorphous Si (a-Si) layer at room temperature followed by annealing at 700 °C in ultrahigh vacuum. The thickness of the a-Si was selected to be such that the consumption of Si atoms from the substrate is minimized by taking into account the formation of an amorphous interlayer at the Dy/Si(111) interface. Based on our experimental findings, a new mechanism for the formation of pinhole is proposed. The Stranski–Krastanov growth behavior of epitaxial DySi2−x on Si(111) by solid phase epitaxy leads to the apparently random formation of a high density of recessed regions at the initial stage of silicidation. Polycrystalline DySi2−x was found to be present at the areas inside and epitaxial DySi2−x outside the recessed regions. Large numbers of Si atoms from the substrate can therefore diffuse through the recessed regions. As a result, the depth and size of the recessed regions increase with annealing time. Finally, the DySi2−x thin layer inside the recessed regions with higher interface energy is thermally unstable and breaks apart to form pinholes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368538
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  • 9
    Electronic Resource
    Electronic Resource
    Transmission electron microscope study of the dry oxidation kinetics of WSi2 on (001)Si and polycrystalline silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4018-4022 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-section transmission electron microscopy has been applied to study the growth kinetics of oxide of WSi2 on (001)Si and polycrystalline silicon (poly Si) in the dry oxidation process. The linear activation energy and the parabolic activation energy of WSi2 on (001)Si were found to be 0.8±0.2 and 1.0±0.2 eV for samples dry oxidized at 800–890 °C for 10–60 min, respectively. On the other hand, the linear activation energy and parabolic activation energy of WSi2 on polycrystalline silicon for samples dry oxidized at 800–890 °C for 10–60 min were 1.0±0.2 and 1.8±0.2 eV. The linear activation energy is attributed to the diffusion of Si atoms from the substrate to the reaction interface. The different parabolic activation energies of 1.0 and 1.8 eV for WSi2 on (001)Si and poly Si, respectively, indicate significant difference in diffusion of O2 through grown SiO2. It is conceivable that stress generated during oxidation and the amount of fluorine atoms, introduced during the low pressure chemical vapor deposition process, present in the silicide layer and grown oxide, can influence the oxide quality and oxidation kinetics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371322
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of stress on the growth of TiSi2 thin films on (001)Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1406-1408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54–TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54–TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800 °C for 30 s, the thickness of the C54– TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti silicide thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123565
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