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  • 1
    Electronic Resource
    Electronic Resource
    Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3011-3016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large set of InGaAs/GaAs quantum well structures was investigated by means of continuous wave photoluminescence (PL) and photoluminescence excitation spectroscopy. Strong photomodulation effects are observed in PL, namely, a strong sensitivity to the excitation energy and strong changes in the line shape when resonant and nonresonant excitations are used together. Correspondingly, the exciton emission exhibits a doublet structure and the excitation spectra, as detected by monitoring the emission at the two peak energies of the PL doublet, show quite different profiles, with peaks and/or dips not directly related to absorption resonances. On the grounds of time-resolved experiments it is shown that band-bending modifications, due to trapping of free carriers at interface defects, account for the observed photomodulation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363160
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3354-3356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the temperature dependence (10–180 K) of the photoluminescence (PL) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20–30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117304
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal-expansion effects in near-field optical microscopy fiber probes induced by laser light absorption (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3408-3410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study on thermal-expansion effects induced by laser light coupling into metal-coated probes for near-field scanning optical microscopy. An expansion of the probe edge of 170 nm per mW of coupled power has been observed as an effect of the temperature raise due to light absorption in the metal coating. The phenomenon has been studied in both time and frequency domains by modulating the coupled laser power, in order to measure the typical time constants related to heat exchange processes, that turned out to be of the order of a few milliseconds. An analytical model, taking into account both the heat conduction through the coating and the convection losses, provides scales for the system parameters and fits the experimental data remarkably well. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125309
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  • 4
    Electronic Resource
    Electronic Resource
    Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3140-3142 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20–30 meV) separated in energy by an average spacing of 30–40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119114
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  • 5
    Electronic Resource
    Electronic Resource
    Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 564-566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is not present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123146
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  • 6
    Electronic Resource
    Electronic Resource
    Carrier recombination dynamics in self-ordered InAs quantum dots (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1371-1375 
    Details
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; III–V compounds and systems ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40–50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650–700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457212
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  • 7
    Electronic Resource
    Electronic Resource
    Excitation energy dependence of the optical properties of InGaAs/GaAs quantum well heterostructures (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1383-1387 
    Details
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Excitons and related phenomena (including electron-hole drops) ; III–V compounds and systems ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457214
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  • 8
    Electronic Resource
    Electronic Resource
    Resonant rayleigh scattering in semiconductor structures (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1487-1492 
    Details
    ISSN: 0392-6737
    Keywords: III-V semiconductors ; Electron states in low-dimensional structures (including, quantum wells, superlattices, layer structures, and intercalation compounds) ; Excitons and related phenomena (including electron-hole drops) ; Brillouin and Rayleigh scattering ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in, resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We concluded that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk, crystals turn out to be better candidates for RRS via propagating states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457231
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