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Positron lifetime measurements on neutron-irradiated InP crystals (1996)

Navarro, F. J. ; Damonte, L. C. ; Marí, B. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 9043-9046

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Neutron-irradiated InP single crystals have been investigated by positron-lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn-transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as-grown and conventionally doped InP crystals. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.362637

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