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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6213-6217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoelectric properties of CoP3 and CeFe4P12 have been measured. These compounds were synthesized by a flux technique using Sn as the solvent. The samples were characterized by x-ray diffractometry and electron microprobe analyses. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured over a wide range of temperatures. The results indicate that CoP3 and CeFe4P12 are semiconductors, in agreement with theoretical predictions. The thermal conductivity of CeFe4P12 is about 10 times larger than that for CeFe4Sb12 which is primarily due to both reduced motion of the Ce ions in smaller voids and lower hole–phonon scattering. The results are analyzed and discussed to provide guidelines for optimization of the thermoelectric properties of these materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5552-5554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A periodic structure of bonded GaAs wafers has been proposed for quasi-phase-matched second-harmonic generation. However, current bonding processes used to fabricate these structures often lead to unacceptably high optical losses. When commercial semi-insulating GaAs wafers were bonded at 850 °C, increases in the free-hole concentration (thermal conversion) were found to be a major cause of excess optical loss. This conversion depended on both the GaAs source and the materials comprising the sample holder. We found that quartz and sapphire could not be used in contact with GaAs wafers because they stuck during the bonding process. On the other hand, As-charged graphite holders did not stick and worked well under our bonding conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 72-77 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Pb5Al3F19 at 160 K is ferroelectric, crystallizing in the tetragonal system. With Mr = 1477.9, the space group is I4cm and a = 14.07 (2), c = 7.30 (1) Å, V = 1445 (3) Å3, Z = 4, Dx = 6.793 Mg m−3. For λ(Mo Kα) = 0.71073 Å, μ = 56.36 mm−1. F(000) = 2480 Pb5Al3F19 undergoes a first-order phase transition on cooling at 120 K and on heating at 270 K. The structure was determined from 656 independent F(hkl) with I〉 3σ(I) and refined by least squares to R = 0.0527, wR = 0.0480, S = 1.065. No atom is further than 0.83 Å, from the hypothetical I4/mcm atomic positions, hence the crystal is structurally ferroelectric. The mean atomic polar displacement of the two independent Al atoms from the zero spontaneous-polarization location, allowing for the F atoms, is 0.207 (28) Å, which leads to a predicted Tc = 860 (230) K. Several additional phase transitions are known to form before the hypothetical phase is attained. Each independent Al atom occupies a fluorine octahedron with average Al—F distance either 1.818 (5) or 1.824 (1) Å. One Pb atom is nine coordinated, occupying a distorted tricapped trigonal prism with average Pb—F = 2.66 (22) Å. The other is ten coordinated, forming a distorted bicapped cuboid, with average Pb—F = 2.61 (28) Å. Pyroelectric pulses are readily detectable in crystals cooled below 120 K, or subsequently on heating to 270 K. Similarly, numerous piezoelectric resonances are observed in the same thermal ranges; the compression mode at 1̃197 kHz has been identified by its characteristic admittance circle. The mechanical quality factor Qm for ferroelectric Pb5Al3F19, determined from the admittance-circle-derived equivalent circuit, is 4̃23.
    Type of Medium: Electronic Resource
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